Datasheet

LMV301
www.ti.com
SNOS968A MAY 2004REVISED MAY 2013
LMV301 Low Input Bias Current, 1.8V Op Amp w/ Rail-to-Rail Output
Check for Samples: LMV301
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FEATURES
DESCRIPTION
The LMV301 CMOS operational amplifier is ideal for
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Input Bias Current: 0.182 pA
single supply, low voltage operation with an ensured
Gain Bandwidth Product: 1 MHz
operating voltage range from 1.8V to 5V. The low
Supply Voltage at 1.8V: 1.8 to 5 V
input bias current of less than 0.182pA typical,
eliminates input voltage errors that may originate from
Supply Current: 150 µA
small input signals. This makes the LMV301 ideal for
Input Referred Voltage Noise at 1kHz:
electrometer applications requiring low input leakage
40nV/Hz
such as sensitive photodetection transimpedance
DC Gain (600 Load): 100 dB
amplifiers and sensor amplifiers. The LMV301 also
features a rail-to-rail output voltage swing in addition
Output Voltage Range at 1.8V: 0.024 to 1.77 V
to a input common-mode range that includes ground.
Input Common-Mode Voltage Range: 0.3 to
The LMV301 will drive a 600 resistive load and up
±1.2 V
to 1000pF capacitive load in unity gain follower
applications. The low supply voltage also makes the
APPLICATIONS
LMV301 well suited for portable two-cell battery
systems and single cell Li-Ion systems.
Thermocouple Amplifiers
The LMV301 exhibits excellent speed-power ratio,
Photo Current Amplifiers
achieving 1MHz at unity gain with low supply current.
Transducer Amplifiers
The high DC gain of 100dB makes it ideal for other
Sample and Hold Circuits
low frequency applications.
Low Frequency Active Filters
The LMV301 is offered in a space saving SC70
package, which is only 2.0X2.1X1.0mm. It is also
similar to the LMV321 except the LMV301 has a
CMOS input.
Connection Diagram
Applications Circuit
Top View
Figure 2. Low Leakage Sample and Hold
Figure 1. SC70-5 Package
See Package Number DCK0005A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2004–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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