Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) Class AB DSBGA 4

OUTPUT

GND

INPUT

2.2k

2.2PF

DIAPHRAGM

AIRGAP

BACKPLATE

ELECTRET

CONNECTOR

LMV1012

www.ti.com

SNAS194H –NOVEMBER 2002–REVISED MAY 2013

LMV1012 Analog Series: Pre-Amplified IC's for High Gain 2-Wire Microphones

Check for Samples: LMV1012

FEATURES

DESCRIPTION

The LMV1012 is an audio amplifier series for small

• Typical LMV1012-15, 2.2V Supply, R

= 2.2 kΩ,

form factor electret microphones. This 2-wire portfolio

C = 2.2 μF, V

= 18 mV

, Unless Otherwise

is designed to replace the JFET amplifier currently

Specified

being used. The LMV1012 series is ideally suited for

• Supply Voltage: 2V - 5V

applications requiring high signal integrity in the

presence of ambient or RF noise, such as in cellular

• Supply Current: <180 μA

communications. The LMV1012 audio amplifiers are

• Signal to Noise Ratio (A-Weighted): 60 dB

specified to operate over a 2.2V to 5.0V supply

• Output Voltage Noise (A-Weighted): −89 dBV

voltage range with fixed gains of 7.8 dB, 15.6 dB,

• Total Harmonic Distortion: 0.09%

20.9 dB, and 23.8 dB. The devices offer excellent

THD, gain accuracy and temperature stability as

• Voltage Gain

compared to a JFET microphone.

– LMV1012-07: 7.8 dB

The LMV1012 series enables a two-pin electret

– LMV1012-15: 15.6 dB

microphone solution, which provides direct pin-to-pin

– LMV1012-20: 20.9 dB

compatibility with the existing JFET market.

– LMV1012-25: 23.8 dB

The devices are offered in extremely thin space

• Temperature Range: −40°C to 85°C

saving 4-bump DSBGA packages. The LMV1012XP

is designed for 1.0 mm canisters and thicker ECM

• Offered in 4-Bump DSBGA Packages

canisters. These extremely miniature packages are

designed for electret condenser microphones (ECM)

APPLICATIONS

form factor.

• Cellular Phones

• Headsets

• Mobile Communications

• Automotive Accessories

• PDAs

• Accessory Microphone Products

Schematic Diagram Built-In Gain Electret Microphone

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (21 pages)

PAGE 1
LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 LMV1012 Analog Series: Pre-Amplified IC's for High Gain 2-Wire Microphones Check for Samples: LMV1012 FEATURES DESCRIPTION • The LMV1012 is an audio amplifier series for small form factor electret microphones. This 2-wire portfolio is designed to replace the JFET amplifier currently being used.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 2.2V Electrical Characteristics (1) Unless otherwise specified, all limits are specified for TJ = 25°C, VDD = 2.2V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 μF. Boldface limits apply at the temperature extremes.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com 5V Electrical Characteristics (1) Unless otherwise specified, all limits are specified for TJ = 25°C, VDD = 5V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 μF. Boldface limits apply at the temperature extremes.
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Connection Diagram B2 GND A2 OUTPUT X B1 INPUT A1 GND 4-Bump DSBGA (Top View) NOTE Pin numbers are referenced to package marking text orientation. The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably. Package marking does not correlate to device type in any way.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Supply Current vs. Supply Voltage (LMV1012-07) Supply Current vs. Supply Voltage (LMV1012-15) 180 260 240 SUPPLY CURRENT (PA) SUPPLY CURRENT (PA) 170 85°C 160 25°C 150 140 130 120 220 85°C 25°C 200 180 160 140 110 -40°C -40°C 100 120 2 3 2.5 3.5 4 4.5 5 2 5.5 4 4.5 5.5 5 Figure 1. Figure 2.
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Gain and Phase vs. Frequency (LMV1012-20) Gain and Phase vs.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Total Harmonic Distortion vs. Input Voltage (LMV1012-07) Total Harmonic Distortion vs. Input Voltage (LMV1012-15) 1.0 1.0 f = 1 kHz 0.9 0.8 0.8 0.7 0.7 THD+N (%) THD+N (%) f = 1 kHz 0.9 0.6 0.5 0.4 0.6 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Output Noise vs. Frequency (LMV1012-20) Output Noise vs.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com APPLICATION SECTION HIGH GAIN The LMV1012 series provides outstanding gain versus the JFET and still maintains the same ease of implementation, with improved gain, linearity and temperature stability. A high gain eliminates the need for extra external components. BUILT IN GAIN The LMV1012 is offered in 0.3 mm height space saving small 4-pin DSBGA packages in order to fit inside the different size ECM canisters of a microphone.
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 MEASURING NOISE AND SNR The overall noise of the LMV1012 is measured within the frequency band from 10 Hz to 22 kHz using an Aweighted filter. The input of the LMV1012 is connected to ground with a 5 pF capacitor, as in Figure 23. Special precautions in the internal structure of the LMV1012 have been taken to reduce the noise on the output. A-WEIGHTED FILTER 5 pF Figure 23.
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LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com ABSOLUTE SOUND PRESSURE [dBPa] -94 dB SENSITIVITY [dBV/Pa] SOUND PRESSURE [dB SPL] VOLTAGE [dBV] Figure 24. dB SPL to dBV Conversion Example: Busy traffic is 70 dB SPL VOUT = 70 −94 −44 = −68 dBV (4) This is equivalent to 1.13 mVPP Since the LMV1012-15 has a gain of 6 (15.6 dB) over the JFET, the output voltage of the microphone is 6.78 mVPP. By implementing the LMV1012-15, the sensitivity of the microphone is -28.4 dBV/Pa (−44 + 15.6).
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LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 NOISE Noise pick-up by a microphone in cell phones is a well-known problem. A conventional JFET circuit is sensitive for noise pick-up because of its high output impedance, which is usually around 2.2 kΩ. RF noise is amongst other caused by non-linear behavior. The non-linear behavior of the amplifier at high frequencies, well above the usable bandwidth of the device, causes AM-demodulation of high frequency signals.
PAGE 14
LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision G (May 2013) to Revision H • 14 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 5-Sep-2013 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ LMV1012TP-25/NOPB DSBGA LMV1012TPX-25/NOPB LMV1012UP-07/NOPB Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant YPB 4 250 178.0 8.4 1.02 1.09 0.66 4.0 8.0 Q1 DSBGA YPB 4 3000 178.0 8.4 1.02 1.09 0.66 4.0 8.0 Q1 DSBGA YPC 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV1012TP-25/NOPB DSBGA YPB 4 250 210.0 185.0 35.0 LMV1012TPX-25/NOPB DSBGA YPB 4 3000 210.0 185.0 35.0 LMV1012UP-07/NOPB DSBGA YPC 4 250 210.0 185.0 35.
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MECHANICAL DATA YPB0004 0.5±0.045 D E TPA04XXX (Rev B) D: Max = 1.057 mm, Min =0.996 mm E: Max = 0.981 mm, Min = 0.92 mm 4215097/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.
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MECHANICAL DATA YPC0004 D 0.350±0.045 E UPA04XXX (Rev C) D: Max = 1.057 mm, Min =0.996 mm E: Max = 0.981 mm, Min = 0.92 mm 4215139/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.
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