Datasheet

LMR70503
www.ti.com SNVS850A –JUNE 2012–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
VIN to GND -0.5 V to 6.0 V
VOUT to GND -6.5 V to 0.5 V
SW to GND -6.5 V to VIN +0.2 V
EN to GND -0.5 V to VIN
FB to GND -0.5V to 5.5V
ESD Rating
(3)
±2 kV
Junction Temperature 150 °C
Storage Temperature Range -65 °C to 150 °C
For Soldering Specs see:
SNOA549
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the recommended Operating Ratings is not implied. The recommended Operating Ratings
indicate conditions at which the device is functional and should not be operated beyond such conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) ESD using the human body model which is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test method is per
JESD22–A114.
OPERATING RATINGS
Input Voltage Range (V
IN
) 2.8 V to 5.5 V
Output Voltage Range (V
OUT
) -0.9 V to -5.5 V
Junction Temperature Range (T
J
) -40°C to 125°C
ELECTRICAL CHARACTERISTICS
Specifications with standard typeface are for T
J
= 25°C only; limits in bold face type apply over the operating junction
temperature (T
J
) range of -40 °C to +125 °C. Typical values represent the most likely parametric norm at T
J
= 25°C, and are
provided for reference purposes only. V
IN
= 3.3 V, V
OUT
= -5.0 V, V
EN
= 1.8 V, unless otherwise indicated in the conditions
column.
Min Typ Max
Symbol Parameter Conditions Units
(1) (2) (1)
V
REF
Reference Voltage R
REF
=100 kΩ to GND 1.166 1.19 1.214 V
EN = 0 V
I
SD
Shutdown Current 0.01 1 µA
V
IN
= 5.5 V
EN = 1.8 V, V
IN
= 5.5 V,
I
Q
Quiescent Current 245 300 µA
No Switching
V
IN
Under Voltage Lock Out Threshold -
UVLO
RISE
2.55 2.7 V
Rising
V
IN
Under Voltage Lock Out Hysteresis
UVLO
HYS
0.1 0.13 V
Band
V
EN-RISE
EN Input Voltage Rising Threshold V
IN
= 5.5 V 1.05 1.2 V
V
EN-HYS
EN Input Voltage Threshold Hysteresis V
IN
= 5.5 V 0.1 0.15 V
I
EN
Enable Current 30 nA
I
FB
FB pin current 10 nA
F
SW-MIN
Minimum Switching frequency 400 500 kHz
T
ON-MIN
Minimum High Side Switch On Time Load = 0 A 70 ns
R
DSON
Switch On State Resistance V
IN
= 2.8V 1.1 2 Ω
(1) Min and Max limits are 100% production tested at an ambient temperature (T
A
) of 25 °C. Limits over the operating temperature range
are specified through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality
Level (AOQL).
(2) Typical specifications represent the most likely parametric norm at 25°C operation.
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