Datasheet

LMP8602, LMP8602Q, LMP8603, LMP8603Q
SNOSB36D JULY 2009REVISED MARCH 2013
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3.3V Electrical Characteristics
(1)
(continued)
Unless otherwise specified, all limits ensured at T
A
= 25°C, V
S
= 3.3V, GND = 0V, 4V V
CM
27V, and R
L
= , Offset (Pin
7) is grounded, 10nF between V
S
and GND. Boldface limits apply at the temperature extremes.
Min Typ Max
Symbol Parameter Conditions Units
(2) (3) (2)
K1 Gain
(4)
9.95 10.0 10.05 V/V
R
F-INT
Output Impedance Filter Resistor 99 100 101 k
TCR
F-INT
Output Impedance Filter Resistor Drift ±5 ±50 ppm/°C
V
OL
R
L
= 2 10 mV
A1 V
OUT
A1 Output Voltage Swing
V
OH
3.2 3.25 V
Output Buffer (From A2 (pin 4) to OUT ( pin 5 )
2 2
V
OS
Input Offset Voltage 0V V
CM
V
S
±0.5 mV
2.5 2.5
LMP8602 4.975 5 5.025
K2 Gain
(4)
V/V
LMP8603 9.95 10 10.05
40 fA
I
B
Input Bias Current of A2
(8)
±20 n A
V
OL
, LMP8602 10 40
mV
R
L
= 100 k
LMP8603 10 80
A2 V
OUT
A2 Output Voltage Swing
(9)(10)
V
OH
,
3.28 3.29 V
R
L
= 100 k
Sourcing, V
IN
= V
S
, V
OUT
= GND -25 -38 -60
I
SC
Output Short-Circuit Current
(11)
mA
Sinking, V
IN
= GND, V
OUT
= V
S
30 46 65
(8) Positive current corresponds to current flowing into the device.
(9) For this test input is driven from A1 stage in uni-directional mode (Offset pin connected to GND).
(10) For V
OL
, R
L
is connected to V
S
and for V
OH
, R
L
is connected to GND.
(11) Short-Circuit test is a momentary test. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150°C.
5V Electrical Characteristics
(1)
Unless otherwise specified, all limits ensured for at T
A
= 25°C, V
S
= 5V, GND = 0V, 22V V
CM
60V, and R
L
= , Offset
(Pin 7) is grounded, 10nF between V
S
and GND. Boldface limits apply at the temperature extremes.
Min Typ Max
Symbol Parameter Conditions Units
(2) (3) (2)
Overall Performance (From -IN (pin 1) and +IN (pin 8) to OUT (pin 5) with pins A1 (pin 3) and A2 (pin 4) connected)
I
S
Supply Current 1.1 1.5 mA
LMP8602 49.75 50 50.25
A
V
Total Gain
(4)
V/V
LMP8603 99.5 100 100.5
Gain Drift 40°C T
A
125°C 2.8 ±20 ppm/°C
SR Slew Rate
(5)
V
IN
= ±0.25V 0.6 0.83 V/μs
BW Bandwidth 50 60 kHz
V
OS
Input Offset Voltage 0.15 ±1 mV
TCV
OS
Input Offset Voltage Drift
(6)
40°C T
A
125°C 2 ±10 μV/°C
0.1 Hz 10 Hz, 6 Sigma 17.5 μV
P-P
e
N
Input Referred Voltage Noise
Spectral Density, 1 kHz 890 nV/Hz
(1) The electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
(2) Datasheet min/max specification limits are ensured by test.
(3) Typical values represent the most likely parameter norms at T
A
= +25°C, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
(4) Both the gain of the preamplifier A1
V
and the gain of the buffer amplifier A2
V
are measured individually. The over all gain of both
amplifiers A
V
is also measured to assure the gain of all parts is always within the A
V
limits.
(5) Slew rate is the average of the rising and falling slew rates.
(6) Offset voltage drift determined by dividing the change in V
OS
at temperature extremes into the total temperature change.
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