Datasheet

LMP7300
SNOSAT7F –AUGUST 2007–REVISED MARCH 2013 www.ti.com
5V Electrical Characteristics
(1)
Unless otherwise specified, all limits are ensured for T
A
= 25°C, V
+
= 5V, V
−
= 0V, and V
CM
= V
+
/2, R
PULLUP
= 100 kΩ, C
LOAD
=
10 pF. Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min
(2)
Typ
(3)
Max
(2)
Units
13
I
S
Supply Current R
PULLUP
= Open 10 μA
18
Comparator
±0.75
V
CM
= V
+
/2 SOIC ±0.07 mV
±2
V
OS
Input Offset Voltage
±1.0
V
CM
= V
+
/2 VSSOP ±0.07 mV
±2.2
TCV
OS
Input Offset Average Drift See
(4)
1.8 μV/°C
3
I
B
Input Bias Current
(5)
|V
ID
| < 2.5V 1.2 nA
4
I
OS
Input Offset Current 0.15 0.5 nA
CMRR Common Mode Rejection Ratio 1 ≤ V
CM
≤ 5V 80 100 dB
PSRR Power Supply Rejection Ratio V
+
= 2.7V to 12V 80 100 dB
V
OL
Output Voltage Low I
LOAD
= 10 mA 0.25 0.4 V
I
LEAK
Output Leakage Current Comparator Output in High State 1 pA
0 < Ref-V
HYS
TP,N < 25 mV 1.000
Hysteresis Control Voltage
HC
LIN
mV/V
Linearity
25 mV < Ref-V
HYS
TP,N < 100 mV 0.950
3
I
HYS
Hysteresis Leakage Current 1.2 nA
4
Overdrive = 10 mV, C
L
= 10 pF 12 15
Propagation Delay
TPD μs
(High to Low)
Overdrive = 100 mV, C
L
= 10 pF 4 7
Reference
SOIC 2.043 2.048 2.053 V
V
O
Reference Voltage
VSSOP 2.043 2.048 2.056 V
Line Regulation V
CC
= 2.7V to 12V 14 80 μV/V
Load Regulation I
OUT
= 0 to 1 mA 0.2 0.5 mV/mA
TCV
REF/°C
Temperature Coefficient −40°C to 125°C 55 ppm/°C
V
N
Output Noise Voltage 0.1 Hz to 10 Hz 80 μV
PP
10 Hz to 10 kHz 100 μV
RMS
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where T
J
> T
A
.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using
statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) Offset voltage average drift determined by dividing the change in V
OS
at temperature extremes, by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
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