Datasheet

ADC121S021
IN
V
+
LM4140A
6
2
1,4,7,8
3
V
+
1 PF
+
-
0.1 PF
10 PF
V
A
V
+
+
-
+
-
-
+
12 k:
10 k:
40 k:
½
LMP2232
R+'R
R+'R
R
R
V
+
V
+
V
+
12 k:
10 k:
40 k:
1 k:
½
LMP2232
GND
½
LMP2232
½
LMP2232
LMP2232
SNOSB02C –JANUARY 2008–REVISED MARCH 2013 www.ti.com
Typical Application
Figure 1. Strain Gauge Bridge Amplifier
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
ESD Tolerance
(3)
Human Body Model 2000V
Machine Model 100V
Differential Input Voltage ±300 mV
Supply Voltage (V
S
= V
+
- V
–
) 6V
Voltage on Input/Output Pins V
+
+ 0.3V, V
–
– 0.3V
Storage Temperature Range −65°C to 150°C
Junction Temperature
(4)
150°C
Mounting Temperature
Infrared or Convection (20 sec.) +235°C
Wave Soldering Lead Temperature (10 sec.) +260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate conditions for which the device
is intended to be functional, but specific performance is not ensured. For ensured specifications and test conditions, see the Electrical
Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The maximum power dissipation is a function of T
J(MAX)
, θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
– T
A
)/ θ
JA
. All numbers apply for packages soldered directly onto a PC board.
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