Datasheet
V
+
1
2
3
4 5
6
7
8
N/C
V
IN
-
V
IN
+
V
-
N/C
V
OUT
N/C
-
+
LMP2011, LMP2012
www.ti.com
SNOSA71K –OCTOBER 2004–REVISED MARCH 2013
LMP2011 Single/LMP2012 Dual High Precision, Rail-to-Rail Output Operational Amplifier
Check for Samples: LMP2011, LMP2012
1
FEATURES
DESCRIPTION
The LMP201X series are the first members of TI's
2
(For V
S
= 5V, Typical Unless Otherwise Noted)
new LMP
TM
precision amplifier family. The LMP201X
• Low Ensured V
OS
Over Temperature 60 µV
series offers unprecedented accuracy and stability in
• Low Noise with No 1/f 35nV/√Hz
space-saving miniature packaging while also being
offered at an affordable price. This device utilizes
• High CMRR 130 dB
patented techniques to measure and continually
• High PSRR 120 dB
correct the input offset error voltage. The result is an
• High A
VOL
130 dB
amplifier which is ultra stable over time and
temperature. It has excellent CMRR and PSRR
• Wide Gain-Bandwidth Product 3MHz
ratings, and does not exhibit the familiar 1/f voltage
• High Slew Rate 4V/µs
and current noise increase that plagues traditional
• Low Supply Current 930µA
amplifiers. The combination of the LMP201X
characteristics makes it a good choice for transducer
• Rail-to-Rail Output 30mV
amplifiers, high gain configurations, ADC buffer
• No External Capacitors Required
amplifiers, DAC I-V conversion, and any other 2.7V-
5V application requiring precision and long term
APPLICATIONS
stability.
• Precision Instrumentation Amplifiers
Other useful benefits of the LMP201X are rail-to-rail
• Thermocouple Amplifiers
output, a low supply current of 930 µA, and wide
gain-bandwidth product of 3 MHz. These extremely
• Strain Gauge Bridge Amplifier
versatile features found in the LMP201X provide high
performance and ease of use.
Connection Diagram
Figure 1. 5-Pin SOT-23 Single Figure 2. 8-Pin Single SOIC Figure 3. 8-Pin Dual
(LMP2011) (LMP2011) SOIC/VSSOP (LMP2012)
Top View Top View Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2004–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.