Datasheet

0 50 100 150 200 250
0
5
10
15
CURRENT (mA)
FREQUENCY (MHz)
Cload = 10 pF
Vddo = 1.5 V
Vddo = 1.8 V
Vddo = 2.5 V
Vddo = 3.3 V
0 200 400 600 800 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
OUTPUT SWING (V)
FREQUENCY (MHz)
Rterm=50 
Vddo=1.5 V
Vddo=1.8 V
Vddo=2.5 V
Vddo=3.3 V
LVCMOS Output
CLKin Source
0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
250
300
350
400
450
500
RMS JITTER (fs)
DIFFERENTIAL INPUT SLEW RATE (V/ns)
Fclk-100 MHz
Int. BW=1-20 MHz
-40 C
25 C
85 C
CLKin Source
0.5 1.0 1.5 2.0 2.5 3.0
-170
-165
-160
-155
-150
-145
-140
NOISE FLOOR (dBc/Hz)
DIFFERENTIAL INPUT SLEW RATE (V/ns)
Fclk=100 MHz
Foffset=20 MHz
-40 C
25 C
85 C
CLKin Source
LMK00105
SNAS579F –MARCH 2012–REVISED MAY 2013 www.ti.com
Typical Performance Characteristics
Unless otherwise specified: V
dd
= V
ddo
= 3.3 V, T
A
= 20 °C, C
L
= 5 pF, CLKin driven differentially, input slew rate ≥ 2 V/ns.
RMS Jitter vs. CLKin Slew Rate @ 100 MHz Noise Floor vs. CLKin Slew Rate @ 100 MHz
Figure 1. Figure 2.
LVCMOS Phase Noise @ 100 MHz LVCMOS Output Swing vs. Frequency
(1) Test conditions: LVCMOS Input, slew rate ≥ 2 V/ns, C
L
= 5 pF in
parallel with 50 Ω, BW = 1 MHz to 20 MHz
Figure 3. Figure 4.
Iddo per Output vs Frequency
Figure 5.
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