Datasheet

LMH6723, LMH6724, LMH6725
SNOSA83H –AUGUST 2003–REVISED APRIL 2013 www.ti.com
POWER DISSIPATION
Follow these steps to determine the maximum power dissipation for the LMH6723/LMH6724/LMH6725:
1. Calculate the quiescent (no-load) power: P
AMP
= I
CC
* (V
S
)
where V
S
= V
+
- V
-
2. Calculate the RMS power dissipated in the output stage: P
D
(rms) = rms ((V
S
-V
OUT
)*I
OUT
) where V
OUT
and
I
OUT
are the voltage and current of the external load and V
s
is the supply voltage.
3. Calculate the total RMS power: P
T
= P
AMP
+P
D
The maximum power that the LMH6723/LMH6724/LMH6725 package can dissipate at a given temperature can
be derived with the following equation:
P
MAX
= (150º - T
AMB
)/ θ
JA
where
• T
AMB
= Ambient temperature (°C)
• θ
JA
= Thermal resistance, from junction to ambient, for a given package (°C/W) (1)
For the SOIC-8 package θ
JA
is 166°C/W and for the SOT-23-5 it is 230°C/W. The SOIC-14 has a θ
JA
of
130°C/W. The TSSOP-14 has a θ
JA
of 160°C/W.
ESD PROTECTION
The LMH6723/LMH6724/LMH6725 is protected against electrostatic discharge (ESD) on all pins. The
LMH6723/LMH6725 will survive 2000V Human Body Model or 200V Machine Model events.
Under closed loop operation the ESD diodes have no effect on circuit performance. There are occasions,
however, when the ESD diodes will be evident. If the LMH6723/LMH6724/LMH6725 is driven into a slewing
condition the ESD diodes will clamp large differential voltages until the feedback loop restores closed loop
operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct.
18 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated
Product Folder Links: LMH6723 LMH6724 LMH6725