Datasheet
LMH6654, LMH6655
SNOS956D –JUNE 2001–REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
ESD Tolerance
(2)
Human Body Model 2 kV
Machine Model 200V
V
IN
Differential ±1.2V
Output Short Circuit Duration
(3)
Supply Voltage (V
+
− V
−
) 13.2V
Voltage at Input pins V
+
+0.5V, V
−
−0.5V
Storage Temperature Range −65°C to +150°C
Junction Temperature
(4)
+150°C
Soldering Information
Infrared or Convection (20 sec.) 235°C
Wave Soldering (10 sec.) 260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Table.
(2) Human body model, 1.5 kΩ in series with 100 pF. Machine model: 0Ω in series with 100 pF.
(3) Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature
at 150°C.
(4) The maximum power dissipation is a function of T
J(MAX)
, θ
JA
and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
− T
A
)/θ
JA
. All numbers apply for packages soldered directly onto a PC board.
Operating Ratings
(1)
Supply Voltage (V
+
- V
−
) ±2.5V to ±6.0V
Junction Temperature Range −40°C to +85°C
Thermal Resistance (θ
JA
)
8-Pin SOIC 172°C/W
8-Pin VSSOP (DGK) 235°C/W
5-Pin SOT-23 265°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Table.
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