Datasheet

6
7
8
5
3
2
1
4
OUT
COMP
PD
IN+
IN-
V
-
V
+
FB
V
-
DAP
OUT
V
-
+IN
V
+
-IN
+
-
1
2
3
5
4
R
F
1.2k
R
L
500
+5VDC
D1
+5VDC
C
D
= 10 pF
+5VDC
R2
2k
C1
0.1 PF
R1
3k
LMH
6629
I
D
C
F
0.6 pF
(1.2 pF (2) series)
Vout = 3VDC - 1200 x I
D
LMH6629
SNOSB18G –APRIL 2010–REVISED MARCH 2013 www.ti.com
Typical Application Circuit
Figure 1. Transimpedance Amplifier
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Connection Diagram
Figure 2. WSON-8 (Top View) Figure 3. SOT-23-5 (Top View)
See Package Number NGQ0008A See Package Number DBV
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Product Folder Links: LMH6629