Datasheet
LMH6609
SNOSA84F –AUGUST 2003–REVISED MARCH 2013
www.ti.com
±3.3V Electrical Characteristics
Unless specified, A
V
= +2, R
F
= 250Ω: V
S
= ±3.3V, R
L
= 100Ω; unless otherwise specified. Boldface limits apply over
temperature Range.
(1)
Symbol Parameter Conditions Min Typ Max Units
Frequency Domain Response
SSBW −3dB Bandwidth V
OUT
= 0.5V
PP
180 MHz
LSBW −3dB Bandwidth V
OUT
= 3.0V
PP
110 MHz
SSBWG1 −3dB Bandwidth A
V
= 1 V
OUT
= 0.25V
PP
450 MHz
GFP .1dB Bandwidth V
OUT
= 1V
PP
40 MHz
DG Differential Gain R
L
= 150Ω, 4.43MHz .01 %
DP Differential Phase R
L
= 150Ω, 4.43MHz .06 deg
Time Domain Response
TRL 1V Step 2.2 ns
SR Slew Rate 2V Step
(2)
800 V/µs
Distortion and Noise Response
HD2 2
nd
Harmonic Distortion 2V
PP
, 20MHz −63 dBc
HD3 3
rd
Harmonic Distortion 2V
PP
, 20MHz −43 dBc
Equivalent Input Noise
nV/
VN Voltage Noise >1MHz 3.7
pA/√Hz
CN Current Noise >1MHz 1.1 pA/√Hz
Static, DC Performance
±2.5
V
IO
Input Offset Voltage 0.8 mV
±3.5
−1 ±3
I
BN
Input Bias Current µA
±6
0 ±1.5
I
BI
Input Offset Current µA
±3
PSRR Power Supply Rejection Ratio DC, .5V Step 67 73 dB
CMRR Common Mode Rejection Ratio DC, 1V Step 67 75 dB
R
L
= ∞ 3.6 5 mA
I
CC
Supply Current
6
Miscellaneous Performance
R
OUT
Input Resistance Close Loop .05 Ω
V
O
R
L
= ∞ ±2.1 ±2.3 V
Output Voltage Range
V
OL
R
L
= 100Ω ±1.9 ±2.0 V
CMIR Input Voltage Range Common Mode ±1.3 V
I
O
Linear Output Current V
OUT
±30 ±45 mA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self heating where T
J
> T
A
. See Applications Section for information on temperature derating of this device.
Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted.
(2) Slew rate is Average of Rising and Falling 40-60% slew rates.
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