Datasheet

LMH6609
SNOSA84F –AUGUST 2003–REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
V
S
(V
+
- V
−
) ±6.6V
I
OUT
(2)
Common Mode Input Voltage V+ to V−
Maximum Junction Temperature +150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range +300°C
ESD Tolerance
(3)
Human Body Model 2000V
Machine Model 200V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional. For specifications, see the Electrical Characteristics tables.
(2) The maximum output current (I
OUT
) is determined by device power dissipation limitations. See the Power Dissipation section of the
Application Section for more details.
(3) Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF.
Operating Ratings
(1)
Thermal Resistance Package (θ
JC
) (θ
JA
)
8-Pin SOIC 65°C/W 145°C/W
5-Pin SOT23 120°C/W 187°C/W
Operating Temperature −40°C +85°C
Nominal Supply Voltage
(2)
±3.3V ±6V
(1) The maximum output current (I
OUT
) is determined by device power dissipation limitations. See the Power Dissipation section of the
Application Section for more details.
(2) Nominal Supply voltage range is for supplies with regulation of 10% or better.
±5V Electrical Characteristics
Unless specified, A
V
= +2, R
F
= 250Ω: V
S
= ±5V, R
L
= 100Ω; unless otherwise specified. Boldface limits apply over
temperature Range.
(1)
Symbol Parameter Conditions Min Typ Max Units
Frequency Domain Response
SSBW −3dB Bandwidth V
OUT
= 0.5V
PP
260 MHz
LSBW −3dB Bandwidth V
OUT
= 4.0V
PP
150 170 MHz
SSBWG1 −3dB Bandwidth A
V
= 1 V
OUT
= 0.25V
PP
900 MHz
GFP .1dB Bandwidth Gain is Flat to .1dB 130 MHz
DG Differential Gain R
L
= 150Ω, 4.43MHz 0.01 %
DP Differential Phase R
L
= 150Ω, 4.43MHz 0.026 deg
Time Domain Response
TRS Rise and Fall Time 1V Step 1.6 ns
TRL 4V Step 2.6 ns
t
s
Settling Time to 0.05% 2V Step 15 ns
SR Slew Rate 4V Step
(2)
1200 1400 V/µs
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self heating where T
J
> T
A
. See Applications Section for information on temperature derating of this device.
Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted.
(2) Slew rate is Average of Rising and Falling 40-60% slew rates.
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