Datasheet

LMH6601, LMH6601-Q1
www.ti.com
SNOSAK9E JUNE 2006REVISED MARCH 2013
5V ELECTRICAL CHARACTERISTICS
Single Supply with V
S
= 5V, A
V
= +2, R
F
= 604, SD tied to V
+
, V
OUT
= V
S
/2, R
L
= 150 to V
unless otherwise specified.
Boldface limits apply at temperature extremes.
(1)
Symbol Parameter Condition Min
(2)
Typ
(2)
Max
(2)
Units
Frequency Domain Response
SSBW –3 dB Bandwidth Small Signal V
OUT
= 0.25 V
PP
130
MHz
SSBW_1 V
OUT
= 0.25 V
PP
, A
V
= +1 250
Peak Peaking V
OUT
= 0.25 V
PP
, A
V
= +1 2.5 dB
Peak_1 Peaking V
OUT
= 0.25 V
PP
0 dB
LSBW –3 dB Bandwidth Large Signal V
OUT
= 2 V
PP
81 MHz
Peak_2 Peaking V
OUT
= 2 V
PP
0 dB
0.1 dB BW 0.1 dB Bandwidth V
OUT
= 2 V
PP
30 MHz
GBWP_1k Gain Bandwidth Product Unity Gain, R
L
= 1 k to V
S
/2 155
MHz
GBWP_150 Unity Gain, R
L
= 150 to V
S
/2 125
A
VOL
Large Signal Open Loop Gain 0.5V < V
OUT
< 4.5V 56 66 dB
PBW Full Power BW –1 dB, A
V
= +4, V
OUT
= 4.2 V
PP
, 30 MHz
R
L
= 150 to V
S
/2
DG Differential Gain 4.43 MHz, 1.7V V
OUT
3.3V, 0.06 %
R
L
= 150 to V
DP Differential Phase 4.43 MHz, 1.7V V
OUT
3.3V 0.10 deg
R
L
= 150 to V
Time Domain Response
TRS/TRL Rise & Fall Time 0.25V Step 2.6 ns
OS Overshoot 0.25V Step 10 %
SR Slew Rate 2V Step 275 V/μs
T
S
Settling Time 1V Step, ±0.1% 50
ns
T
S_1
1V Step, ±0.02% 220
PD Propagation Delay Input to Output, 250 mV Step, 50% 2.4 ns
C
L
Cap Load Tolerance A
V
= 1, 10% Overshoot, 75 in Series 50 pF
Distortion & Noise Performance
HD2 Harmonic Distortion (2
nd
) 2 V
PP
, 10 MHz 56
dBc
HD2_1 4 V
PP
, 10 MHz, R
L
= 1 k to V
S
/2 61
HD3 Harmonic Distortion (3
rd
) 2 V
PP
, 10 MHz 73
dBc
HD3_1 4 V
PP
, 10 MHz, R
L
= 1 k to V
S
/2 64
THD Total Harmonic Distortion 4 V
PP
, 10 MHz, R
L
= 1 k to V
S
/2 58
V
N1
Input Voltage Noise >10 MHz 7
nV/Hz
V
N2
1 MHz 10
I
N
Input Current Noise >1 MHz 50 fA/Hz
Static, DC Performance
V
IO
Input Offset Voltage ±1 ±2.4 mV
±5.0
DV
IO
Input Offset Voltage Average Drift
(3)
5 μV/°C
I
B
Input Bias Current
(4)
5 50 pA
I
OS
Input Offset Current
(4)
2 25 pA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where T
J
> T
A
.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(3) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(4) This parameter is ensured by design and/or characterization and is not tested in production.
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