Datasheet

LMH6570
SNCS104C –APRIL 2005–REVISED MAY 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Human Body Model 2000V
ESD Tolerance
(3)
Machine Model 200V
Supply Voltage (V
+
− V
−
) 13.2V
I
OUT
(4)
130 mA
Signal & Logic Input Pin Voltage ±(V
S
+0.6V)
Signal & Logic Input Pin Current ±20 mA
Maximum Junction Temperature +150°C
Storage Temperature Range −65°C to +150°C
Soldering Information: See SNOA549
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical
Characteristics tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human Body model, 1.5kΩ in series with 100 pF. Machine model, 0Ω In series with 200 pF
(4) The maximum output current (I
OUT
) is determined by the device power dissipation limitations (The junction temperature cannot be
allowed to exceed 150°C). See POWER DISSIPATION of the Application Notes for more details. A short circuit condition should be
limited to 5 seconds or less.
Operating Ratings
(1)
Operating Temperature −40 °C to 85 °C
Supply Voltage Range 6V to 12V
Package (θ
JA
) 150°C/W
Thermal Resistance
8-Pin SOIC (θ
JC
) 50°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical
Characteristics tables.
±5V Electrical Characteristics
V
S
= ±5V, R
L
= 100Ω, R
F
=576Ω, A
V
=2 V/V, T
J
=25 °C, Unless otherwise specified. Bold numbers specify limits at temperature
extremes.
Symbol Parameter Conditions
(1)
Min
(2)
Typ
(3)
Max
(2)
Units
Frequency Domain Performance
SSBW −3 dB Bandwidth V
OUT
= 0.5 V
PP
500 MHz
LSBW –3 dB Bandwidth V
OUT
= 2 V
PP
(4)
400 MHz
.1 dBBW 0.1 dB Bandwidth V
OUT
= 0.25 V
PP
150 MHz
DG Differential Gain R
L
= 150Ω, f=4.43 MHz 0.02 %
DP Differential Phase R
L
= 150Ω, f=4.43 MHz 0.05 deg
XTLK Channel to Channel Crosstalk All Hostile, f = 5 MHz −70 dBc
Time Domain Response
TRS Channel to Channel Switching Time Logic transition to 90% output 8 ns
Enable and Disable Times Logic transition to 90% or 10% output. 10 ns
TRL Rise and Fall Time 4V Step 2.4 ns
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self heating where T
J
> T
A
. See Application Notes for information on temperature de-rating of this device. Min/Max
ratings are based on product testing, characterization and simulation. Individual parameters are tested as noted.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical
Quality Control (SQC) methods.
(3) Typical numbers are the most likely parametric norm.
(4) Parameter ensured by design.
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