Datasheet

LMH6570
www.ti.com SNCS104C –APRIL 2005–REVISED MAY 2013
Follow these steps to determine the maximum power dissipation for the LMH6570:
1. Calculate the quiescent (no-load) power:
P
AMP
= I
CC
* (V
S
),
where
• V
S
= V
+
- V
−
(1)
2. Calculate the RMS power dissipated in the output stage:
P
D
(rms) = rms ((V
S
- V
OUT
) * I
OUT
)
where
• V
OUT
and I
OUT
are the voltage across
• The current through the external load and V
S
is the total supply voltage (2)
3. Calculate the total RMS power:
P
T
= P
AMP
+ P
D
(3)
The maximum power that t-he LMH6570 package can dissipate at a given temperature can be derived with the
following equation:
P
MAX
= (150° – T
AMB
)/ θ
JA
where
• T
AMB
= Ambient temperature (°C)
• θ
JA
= Thermal resistance, from junction to ambient, for a given package (°C/W)
• For the SOIC package θ
JA
is 150 °C/W (4)
ESD PROTECTION
The LMH6570 is protected against electrostatic discharge (ESD) on all pins. The LMH6570 will survive 2000V
Human Body model and 200V Machine model events. Under normal operation the ESD diodes have no effect on
circuit performance. There are occasions, however, when the ESD diodes will be evident. If the LMH6570 is
driven by a large signal while the device is powered down the ESD diodes will conduct . The current that flows
through the ESD diodes will either exit the chip through the supply pins or will flow through the device, hence it is
possible to power up a chip with a large signal applied to the input pins. Using the shutdown mode is one way to
conserve power and still prevent unexpected operation.
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