Datasheet

+V
IN
+5V
V
G
R
1
50:
R
2
50:
R
G
170:
R
F
1k:
R
L
100:
6
5
4
3
12
10
9
11
-V
IN
LMH6503
1
14
8
7
2
V
OUT
-5V
13
NC
-1.2
-0.8 -0.4 0 0.4 0.8
V
G
(V)
-80
-70
-60
-50
-40
-30
30
GAIN (dB)
1.2
-20
-10
0
10
20
0
1
2
3
4
5
11
6
7
8
9
10
GAIN
(
V
/
V
)
V
IN_DIFF
= ±0.1V
dB
V/V
-40°C
25°C
85°C
-40°C
25°C
85°C
LMH6503
SNOSA78E –OCTOBER 2003–REVISED APRIL 2013 www.ti.com
Figure 1. Gain vs. V
G
for Various Temperature
Typical Application
Figure 2. A
VMAX
= 10V/V
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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