Datasheet

LMH0040, LMH0050
LMH0070, LMH0340
SNLS271I –APRIL 2007–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
DD3V3
) −0.3V to +4.0V
Supply Voltage (V
DD2V5
) −0.3V to +3.0V
LVCMOS input voltage −0.3V to (V
DD3V3
+0.3V)
LVCMOS output voltage −0.3V to (V
DD3V3
+0.3V)
SMBus I/O voltage -0.3V to +3.6V
LVDS Input Voltage -0.3V to +3.6V
Junction Temperature +150°C
Storage Temperature −65° to 150°C
Thermal Resistance— Junction to Ambient—θ
JA
25°C/W
ESD Rating—Human Body Model, 1.5 KΩ, 100 pF ≥±8kV
(1) “Absolute Maximum Ratings” are limits beyond which the safety of the device cannot be ensured. It is not implied that the device will
operate up to these limits.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
Parameter Min Typ Max Units
Supply Voltage (V
DD3V3
-GND) 3.135 3.3 3.465 V
Supply Voltage (V
DD2V5
-GND) 2.375 2.5 2.625 V
Supply noise amplitude (10 Hz to 50 MHz) 100 mV
P-P
Ambient Temperature −40 +25 +85 °C
Case Temperature 100 °C
TXCLK input frequency LMH0340 27 297 MHz
LMH0040 27 149 MHz
LMH0070 26.5 27 28 MHz
LMH0050 27 149 MHz
LVDS PCB board trace length (mismatch <2%) 25 cm
Output Driver Pullup Resistor Termination Voltage
(1)
2.5 2.625 V
(1) Applies to LMH0340, LMH0040, and LMH0070.
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