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LME49725

www.ti.com

SNAS427A –APRIL 2008–REVISED APRIL 2013

LME49725 PowerWise® Dual High Performance, High Fidelity Audio Operational Amplifier

Check for Samples: LME49725

FEATURES

DESCRIPTION

The LME49725 is part of the ultra-low distortion, low

• Optimized for Superior Audio Signal Fidelity

noise, high slew rate operational amplifier series

• Output Short Circuit Protection

optimized and fully specified for high performance,

• PSRR and CMRR Exceed 120dB (Typ)

high fidelity applications. Combining advanced

leading-edge process technology with state-of-the-art

circuit design, the LME49725 audio operational

APPLICATIONS

amplifiers deliver superior audio signal amplification

• Audio Amplification

for outstanding audio performance. The LME49725

• Preamplifiers

combines extremely low voltage noise density

(3.3nV/√Hz) with vanishingly low THD+N (0.00004%)

• Multimedia

to easily satisfy the most demanding audio

• Phono Preamplifiers

applications. To ensure that the most challenging

• Professional Audio

loads are driven without compromise, the LME49725

has a high slew rate of ±15V/μs and an output current

• Equalization and Crossover Networks

capability of ±22mA. Further, dynamic range is

• Line Drivers

maximized by an output stage that drives 2kΩ loads

• Line Receivers

to within 1V of either power supply voltage and to

• Active Filters within 1.4V when driving 600Ω loads.

Part of the PowerWise® family of energy efficient

KEY SPECIFICATIONS

solutions, the LME49725 consumes only 3.0mA of

supply current per amplifier while providing superior

• Power Supply Voltage Range: ±4.5V to ±18 V

performance to high performance, high fidelity

• THD+N (A

= 1, V

OUT

= 3V

RMS

, f

= 1kHz)

applications.

– R

= 2kΩ: 0.00004% (Typ)

The LME49725's outstanding CMRR (120dB), PSRR

– R

= 600Ω: 0.00004% (Typ)

(120dB), and V

(0.5mV) give the amplifier excellent

• Quiescent Current per Amplifier: 3.0 mA (Typ)

operational amplifier DC performance.

• Input Noise Density: 3.3 nV/√Hz (Typ)

The LME49725 has a wide supply range of ±4.5V to

• Slew Rate: ±15 V/μs (Typ)

±18V. Over this supply range the LME49725’s input

circuitry maintains excellent common-mode and

• Gain Bandwidth Product: 40 MHz (Typ)

power supply rejection, as well as maintaining its low

• Open Loop Gain (R

= 600Ω): 135 dB (Typ)

input bias current. The LME49725 is unity gain

• Input Bias Current: 15 nA (Typ)

stable. This audio operational amplifier achieves

outstanding AC performance while driving complex

• Input Offset Voltage: 0.5 mV (Typ)

loads with values as high as 100pF.

• DC Gain Linearity Error: 0.000009 % (Typ)

The LME49725 is available in 8–lead narrow body

SOIC.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (25 pages)

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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 LME49725 PowerWise® Dual High Performance, High Fidelity Audio Operational Amplifier Check for Samples: LME49725 FEATURES DESCRIPTION • • • The LME49725 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Connection Diagram 1 8 OUTPUT A + V 2 7 INVERTING INPUT A OUTPUT B A NON-INVERTING INPUT A 3 - 4 B + + 6 INVERTING INPUT B 5 V NON-INVERTING INPUT B Figure 1. SOIC Package See Package Number D0008A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Electrical Characteristics for the LME49725 (1) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Parameter THD+N Total Harmonic Distortion + Noise Test Conditions LME49725 Typ (2) AV = 1, VOUT = 3Vrms RL = 2kΩ RL = 600Ω 0.00004 0.00004 AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00005 Limit (3) Units (Limits) % % 0.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Electrical Characteristics for the LME49725(1) (continued) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Parameter Test Conditions LME49725 Typ (2) ROUT Output Impedance fIN = 10kHz Closed-Loop Open-Loop CLOAD Capacitive Load Drive Overshoot 100pF 16 IS Quiescent Current per Amplifier IOUT = 0mA 3.0 fC 1/f Corner Frequency 4 Units (Limits) Ω Ω 0.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics 0.1 0.1 0.01 0.01 THD+N (%) THD+N (%) THD+N vs Frequency VS = 4.5V, VOUT = 1.2VRMS, RL = 600Ω 0.001 THD+N vs Frequency VS = 15V, VOUT = 3VRMS, RL = 600Ω 0.001 0.0001 0.0001 0.00001 20 200 2k 0.00001 20 20k 200 FREQUENCY (Hz) Figure 3. THD+N vs Frequency VS = 18V, VOUT = 3VRMS, RL = 600Ω THD+N vs Frequency VS = 4.5V, VOUT = 1.2VRMS, RL = 2kΩ 0.1 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) 0.1 0.1 0.01 0.01 THD+N (%) THD+N (%) THD+N vs Frequency VS = 4.5V, VOUT = 1.2VRMS, RL = 10kΩ 0.001 THD+N vs Frequency VS = 15V, VOUT = 3VRMS, RL = 10kΩ 0.001 0.0001 0.0001 0.00001 20 200 2k 20k 0.00001 20 0.1 FREQUENCY (Hz) Figure 9. THD+N vs Frequency VS = 18V, VOUT = 3VRMS, RL = 10kΩ THD+N vs Output Voltage VS = 4.5V, RL = 600Ω, f = 1kHz 0.1 THD+N (%) THD+N (%) 0.01 0.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics (continued) 0.1 THD+N vs Output Voltage VS = 4.5V, RL = 2kΩ, f = 1kHz 0.1 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.001 0.0001 0.00001 10m 0.0001 100m 1 4 0.00001 10m THD+N vs Output Voltage VS = 18V, RL = 2kΩ, f = 1kHz THD+N vs Output Voltage VS = 4.5V, RL = 10kΩ, f = 1kHz 0.1 THD+N (%) THD+N (%) 0.01 0.0001 0.001 0.0001 100m 1 0.00001 10m 10 20 1 Figure 16. Figure 17.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) -20 -40 -40 CMRR (dB) -20 -60 -80 -80 -100 -120 -120 0 200 2k -140 20 20k Figure 20. Figure 21. CMRR vs Frequency VS = 15V, RL = 600Ω CMRR vs Frequency VS = 4.5V, RL = 2kΩ 0 -40 -40 -60 -80 -80 -100 -120 -120 200 2k -140 20 20k Figure 22. CMRR vs Frequency VS = 15V, RL = 2kΩ 0 -20 -20 -40 -40 CMRR (dB) CMRR (dB) 2k 20k Figure 23.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics (continued) 0 -20 -20 -40 -40 -60 -80 -60 -80 -100 -100 -120 -120 -140 20 0 200 2k -140 20 20k 2k 20k FREQUENCY (Hz) Figure 26. Figure 27. CMRR vs Frequency VS = 18V, RL = 10kΩ +PSRR vs Frequency VS = 4.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) 0 -20 -20 -40 -40 -60 -80 -80 -100 -120 -120 200 2k 20k -140 20 200k 200 2k 20k 200k FREQUENCY (Hz) FREQUENCY (Hz) Figure 32. Figure 33.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics (continued) -20 -20 -40 -40 PSRR (dB) 0 -60 -80 -60 -80 -100 -100 -120 -120 -140 20 PSRR (dB) -PSRR vs Frequency VS = 4.5V, RL = 10kΩ, VRIPPLE = 200mVP-P 0 200 2k 20k FREQUENCY (Hz) -140 20 200k 200k Figure 39. -PSRR vs Frequency VS = 4.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) -20 -20 -40 -40 -60 -80 -80 -100 -120 -120 200 2k 20k -140 20 200k 200 2k 20k FREQUENCY (Hz) Figure 44. Figure 45. -PSRR vs Frequency VS = 18V, RL = 600Ω, VRIPPLE = 200mVP-P Crosstalk vs Frequency VS = 4.5V, VOUT = 1.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics (continued) -20 -20 -40 -40 -60 -80 -100 Crosstalk vs Frequency VS = 15V, VOUT = 3VRMS,, RL = 2kΩ 0 CROSSTALK (dB) CROSSTALK (dB) 0 Crosstalk vs Frequency VS = 4.5V, VOUT = 1.2VRMS,, RL = 2kΩ -60 -80 -100 -120 -120 -140 20 200 2k -140 20 20k FREQUENCY (Hz) Figure 51. Crosstalk vs Frequency VS = 18V, VOUT = 3VRMS,, RL = 2kΩ Crosstalk vs Frequency VS = 4.5V, VOUT = 1.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) Crosstalk vs Frequency VS = 18V, VOUT = 3VRMS, RL = 10kΩ 0 0 -20 -20 -40 -40 CROSSTALK (dB) CROSSTALK (dB) Crosstalk vs Frequency VS = 15V, VOUT = 3VRMS,, RL = 600Ω -60 -80 -100 -80 -100 -120 -120 -140 20 0 -60 200 2k FREQUENCY (Hz) -140 20 20k 200 2k FREQUENCY (Hz) 20k Figure 56. Figure 57.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 Typical Performance Characteristics (continued) 0.1 IMD vs Output Voltage VS = 4.5V, RL = 2kΩ 0.1 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.001 0.0001 0.0001 0.00001 10m 100m 1 4 0.00001 10m Figure 62. IMD vs Output Voltage VS = 18V, RL = 2kΩ 0.1 THD+N (%) THD+N (%) 0.0001 0.0001 100m 1 0.00001 10m 10 20 100m 1 4 OUTPUT VOLTAGE (V) Figure 64. Figure 65. IMD vs Output Voltage VS = 15V, RL = 10kΩ 0.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) Total Quiescent Current vs Power Supply 100 6.5 Voltage Noise Density vs Frequency VCC = 15V, VEE = –15V, No Load 6.3 VOLTAGE NOISE (nV/ Hz) 6.1 QCURR (mA) 5.9 5.7 5.5 5.3 5.1 4.9 10 4.7 4.5 1 4 6 8 10 12 14 16 18 1 10 POWER SUPPLY (V) 100 1k 10k 100k FREQUENCY (Hz) Figure 68. Figure 69.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 APPLICATION INFORMATION OPERATING RATINGS AND BASIC DESIGN GUIDELINES The LME49725 has a supply voltage range from +9V to +36V single supply or ±4.5V to ±18V dual supply. Bypass capacitors for the supplies should be placed as close to the amplifier as possible. This will help minimize any inductance between the power supply and the supply pins. In addition to a 10μF capacitor, a 0.1μF capacitor is also recommended.
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LME49725 SNAS427A – APRIL 2008 – REVISED APRIL 2013 www.ti.com Demonstration Board Layout Figure 71. Silkscreen Layer Figure 72. Top Layer Figure 73.
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LME49725 www.ti.com SNAS427A – APRIL 2008 – REVISED APRIL 2013 REVISION HISTORY Rev Date 1.0 04/03/08 Description Initial release. A 04/03/13 Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LME49725MAX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LME49725MAX/NOPB SOIC D 8 2500 349.0 337.0 45.
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