Datasheet

LME49723
www.ti.com
SNAS429B JANUARY 2008REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS
(1)(2)(3)
Power Supply Voltage (V
S
= V
+
- V
-
) 36V
Storage Temperature 65°C to 150°C
Input Voltage (V-) - 0.7V to (V+) + 0.7V
Output Short Circuit
(4)
Continuous
Power Dissipation Internally Limited
ESD Susceptibility
(5)
800V
ESD Susceptibility
(6)
180V
Junction Temperature 150°C
Thermal Resistance θ
JA
(SO) 145°C/W
Temperature Range T
MIN
T
A
T
MAX
–40°C T
A
85°C
Supply Voltage Range ±2.5V V
S
± 17V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5k resistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50).
ELECTRICAL CHARACTERISTICS FOR THE LME49723
(1)(2)
The specifications apply for V
S
= ±15V, R
L
= 2k, f
IN
= 1kHz, T
A
= 25°C, unless otherwise specified.
LME49723
Units
Symbol Parameter Conditions
(Limits)
Typical
(3)
Limit
(4)
A
V
= 1, V
OUT
= 3V
rms
R
L
= 2k 0.0002
Total Harmonic Distortion +
THD+N % (max)
Noise
R
L
= 600 0.0002 0.0004
A
V
= 1, V
OUT
= 3V
RMS
IMD Intermodulation Distortion 0.0005 %
Two-tone, 60Hz & 7kHz 4:1
GBWP Gain Bandwidth Product 19 15 MHz (min)
SR Slew Rate ±8 ±6 V/μs (min)
V
OUT
= 1V
P-P
, –3dB
FPBW Full Power Bandwidth referenced to output magnitude 4 MHz
at f = 1kHz
Equivalent Input Noise Voltage f
BW
= 20Hz to 20kHz 0.45 0.65 μV
RMS
(max)
e
n
f = 1kHz 3.2 5 nV/Hz
Equivalent Input Noise Density
f = 10Hz 8.5 (max)
i
n
f = 1kHz 0.7
Current Noise Density pA/Hz
f = 10Hz 1.3
V
OS
Offset Voltage ±0.3 1 mV (max)
ΔV
OS
/ΔTe Average Input Offset Voltage
–40°C T
A
85°C 0.2 μV/°C
mp Drift vs Temperature
Average Input Offset Voltage
PSRR ΔV
S
= 20V
(5)
100 95 dB (min)
Shift vs Power Supply Voltage
f
IN
= 1kHz 118
ISO
CH-CH
Channel-to-Channel Isolation dB
f
IN
= 20kHz 112
I
B
Input Bias Current V
CM
= 0V 200 300 nA (max)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(4) Tested limits are specified to AOQL (Average Outgoing Quality Level).
(5) PSRR is measured as follows: V
OS
is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔV
OS
/ΔV
S
) |.
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