Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 8

LMC6022

www.ti.com

SNOS622D –NOVEMBER 1994–REVISED MARCH 2013

LMC6022 Low Power CMOS Dual Operational Amplifier

Check for Samples: LMC6022

FEATURES

DESCRIPTION

The LMC6022 is a CMOS dual operational amplifier

• Specified for 100 kΩ and 5 kΩ Loads

which can operate from either a single supply or dual

• High Voltage Gain: 120 dB

supplies. Its performance features include an input

• Low Offset Voltage Drift: 2.5 μV/°C

common-mode range that reaches V

−

, low input bias

current, and voltage gain (into 100k and 5 kΩ loads)

• Ultra Low Input Bias Current: 40 fA

that is equal to or better than widely accepted bipolar

• Input Common-Mode Range Includes V

−

equivalents, while the power supply requirement is

• Operating Range from +5V to +15V Supply

less than 0.5 mW.

• Low Distortion: 0.01% at 1 kHz

This chip is built with National's advanced Double-

• Slew Rate: 0.11 V/μs

Poly Silicon-Gate CMOS process.

• Micropower Operation: 0.5 mW

See the LMC6024 datasheet for a CMOS quad

operational amplifier with these same features.

APPLICATIONS

• High-Impedance Buffer or Preamplifier

• Current-to-Voltage Converter

• Long-Term Integrator

• Sample-and-Hold Circuit

• Peak Detector

• Medical Instrumentation

• Industrial Controls

Connection Diagram

Figure 1. 8-Pin SOIC Figure 2. LMC6022 Circuit Topology

Top View (Each Amplifier)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (22 pages)

PAGE 1
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 LMC6022 Low Power CMOS Dual Operational Amplifier Check for Samples: LMC6022 FEATURES DESCRIPTION • • • • • • • • • The LMC6022 is a CMOS dual operational amplifier which can operate from either a single supply or dual supplies.
PAGE 2
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) Differential Input Voltage ±Supply Voltage Supply Voltage (V+ − V−) 16V Lead Temperature (Soldering, 10 sec.
PAGE 3
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 DC ELECTRICAL CHARACTERISTICS (continued) The following specifications apply for V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V, and RL = 1M unless otherwise noted. Boldface limits apply at the temperature extremes; all other limits TJ = 25°C.
PAGE 4
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com DC ELECTRICAL CHARACTERISTICS (continued) The following specifications apply for V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V, and RL = 1M unless otherwise noted. Boldface limits apply at the temperature extremes; all other limits TJ = 25°C.
PAGE 5
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS VS = ±7.5V, TA = 25°C unless otherwise specified Supply Current vs. Supply Voltage Input Bias Current vs. Temperature Figure 3. Figure 4. Input Common-ModeVoltage Range vs.Temperature Output Characteristics Current Sinking Figure 5. Figure 6. Output Characteristics Current Sourcing Input Voltage Noise vs. Frequency Figure 7. Figure 8.
PAGE 6
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) VS = ±7.5V, TA = 25°C unless otherwise specified 6 Crosstalk Rejection vs. Frequency CMRR vs. Frequency Figure 9. Figure 10. CMRR vs. Temperature Power Supply Rejection Ratio vs. Frequency Figure 11. Figure 12. Open-Loop Voltage Gain vs. Temperature Open-Loop Frequency Response Figure 13. Figure 14.
PAGE 7
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) VS = ±7.5V, TA = 25°C unless otherwise specified Gain and Phase Responses vs. Load Capacitance Gain and Phase Responses vs. Temperature Figure 15. Figure 16. Gain Error (VOS vs. VOUT) Non-Inverting Slew Rate vs. Temperature Figure 17. Figure 18. Inverting Slew Rate vs. Temperature Large-Signal Pulse Non-Inverting Response (AV = +1) Figure 19. Figure 20.
PAGE 8
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) VS = ±7.5V, TA = 25°C unless otherwise specified Non-Inverting Small Signal Pulse Response (AV = +1) Inverting Large-Signal Pulse Response Figure 21. Figure 22. Inverting Small-Signal Pulse Response Stability vs. Capacitive Load Figure 23. Note: Avoid resistive loads of less than 500Ω, as they may cause instability. Figure 24. Stability vs. Capacitive Load Figure 25.
PAGE 9
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 APPLICATION HINTS AMPLIFIER TOPOLOGY The topology chosen for the LMC6022 is unconventional (compared to general-purpose op amps) in that the traditional unity-gain buffer output stage is not used; instead, the output is taken directly from the output of the integrator, to allow rail-to-rail output swing.
PAGE 10
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com Capacitive load driving capability is enhanced by using a pull up resistor to V+ (Figure 28). Typically a pull up resistor conducting 50 μA or more will significantly improve capacitive load responses. The value of the pull up resistor must be determined based on the current sinking capability of the amplifier with respect to the desired output swing.
PAGE 11
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 (a) Inverting Amplifier Guard Ring Connections (b) Non-Inverting Amplifier Guard Ring Connections (c) Follower Guard Ring Connections (d) Howland Current Pump Guard Ring Connections Figure 30.
PAGE 12
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com Figure 32. Simple Input Bias Current Test Circuit A suitable capacitor for C2 would be a 5 pF or 10 pF silver mica, NPO ceramic, or air-dielectric. When determining the magnitude of I−, the leakage of the capacitor and socket must be taken into account. Switch S2 should be left shorted most of the time, or else the dielectric absorption of the capacitor C2 could cause errors.
PAGE 13
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 (V+ = 5.0 VDC) If R1 = R5, R3 = R6, and R4 = R7; Then ∴AV ≈ 100 for circuit shown For good CMRR over temperature, low drift resistors should be used. Matching of R3 to R6 and R4 to R7 affects CMRR. Gain may be adjusted through R2. CMRR may be adjusted through R7. Figure 36. Instrumentation Amplifier Oscillator frequency is determined by R1, R2, C1, and C2: fOSC = 1/2πRC where R = R1 = R2 and C = C1 = C2.
PAGE 14
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com (V+ = 5.0 VDC) Figure 38. 1 Hz Square-Wave Oscillator Figure 39. Power Amplifier fc = 10 Hz d = 0.895 Gain = 1 fO = 10 Hz Q = 2.1 Gain = −8.8 Figure 40. 10 Hz Bandpass Filter Figure 41. 10 Hz High-Pass Filter (2 dB Dip) Figure 42.
PAGE 15
LMC6022 www.ti.com SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 (V+ = 5.0 VDC) Gain = −46.8 Output offset voltage reduced to the level of the input offset voltage of the bottom amplifier (typically 1 mV), referred to VBIAS. Figure 43.
PAGE 16
LMC6022 SNOS622D – NOVEMBER 1994 – REVISED MARCH 2013 www.ti.com REVISION HISTORY Changes from Revision C (March 2013) to Revision D • 16 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
PAGE 17
PACKAGE OPTION ADDENDUM www.ti.
PAGE 18
PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PAGE 19
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LMC6022IMX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.
PAGE 20
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMC6022IMX/NOPB SOIC D 8 2500 367.0 367.0 35.
PAGE 21
PAGE 22
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.