Datasheet

LM567, LM567C
SNOSBQ4D –MAY 1999–REVISED MARCH 2013 www.ti.com
LM567C MDC MWC ToNE DECODER
Figure 17. Die Layout (C - Step)
Table 1. Die/Wafer Characteristics
Fabrication Attributes General Die Information
Physical Die Identification LM567C Bond Pad Opening Size (min) 91µm x 91µm
Die Step C Bond Pad Metalization 0.5% COPPER_BAL.
ALUMINUM
Physical Attributes Passivation VOM NITRIDE
Wafer Diameter 150mm Back Side Metal BARE BACK
Dise Size (Drawn) 1600µm x 1626µm Back Side Connection Floating
63.0mils x 64.0mils
Thickness 406µm Nominal
Min Pitch 198µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (C - Step)
(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
OUTPUT FILTER 1 -673 686 91 x 91
LOOP FILTER 2 -673 -419 91 x 91
INPUT 3 -673 -686 91 x 91
V+ 4 -356 -686 91 x 91
TIMING RES 5 673 -122 91 x 91
TIMING CAP 6 673 76 91 x 91
GND 7 178 686 117 x 91
OUTPUT 8 -318 679 117 x 104
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