Datasheet
LM96551
www.ti.com
SNAS511B –OCTOBER 2011–REVISED MAY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Maximum Junction Temperature (T
JMAX
) +150°C
Storage Temperature Range −40°C to +125°C
Supply Voltage (VDD) –0.3V to +12V
Supply Voltage (VDN) +0.3V and −12V
Supply Voltage (VPP) –0.3V and +55V
Supply Voltage (VNN) +0.3V and −55V
Supply Voltage (VSUB) −65V
IO Supply Voltage (VLL) −0.3V to +5.5V
Voltage at Logic Inputs −0.3V to VLL +0.3V
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is specified to be functional, but do not specify specific performance limits. For specifications and test conditions,
see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Operating Ratings
Operation Junction Temperature 0°C to + 70°C
VPP, −VNN; High-voltage supply +3.3V to +50V
VDD, −VDN; Level-shift supply +9V to 11V
VLL, Logic Supply +2.4V to +5.3V
VSUB, Substrate bias supply must be most negative
supply
Package Thermal Resistance (θ
JA
) 19.7 °C/W
ESD Tolerance Human Body Model 2KV
Machine Model 150V
Charge Device Model 750V
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