Datasheet

LM96163
www.ti.com SNAS433D –JUNE 2008–REVISED MAY 2013
DC Electrical Characteristics
TEMPERATURE-TO-DIGITAL CONVERTER CHARACTERISTICS
The following specifications apply for V
DD
= 3.0 VDC to 3.6 VDC, and all analog source impedance R
S
= 50Ω unless
otherwise specified in the conditions. Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
; all other limits T
A
= +25°C; unless
otherwise noted. T
D
is the junction temperature of the remote thermal diode. T
J
is the junction temperature of the LM96163.
Units
Parameter Conditions Typical
(1)
Limits
(2)
(Limits)
Temperature Error Using the Remote T
D
= +50°C to +105°C
Thermal Diode of an Intel Processor on T
A
= +25°C to +85°C T
D
= Remote Diode ±0.75 °C (max)
45nm.
(3)
Junction Temperature
T
A
= +25°C to +85°C T
D
= +40°C to +125°C ±1.5 °C (max)
T
A
= -40°C to +25°C T
D
= +25°C to +125°C ±3.0 °C (max)
Temperature Error Using the Local Diode. T
A
= +25°C to +125°C ±1 ±3 °C (max)
See
(4)
&
(5)
for the thermal resistance to be
T
A
= -40°C to +25°C
±6 °C (max)
used in the self-heating calculation.
11 Bits
Remote Diode Resolution
0.125 °C
8 Bits
Local Diode Resolution
1 °C
Conversion Time, All Temperature Channels Fastest Setting 38.3 41.1 ms (max)
D− Source Voltage 0.4 V
225 µA (max)
(V
D+
− V
D−
) = +0.65 V; High Current 172
Diode Source Current 100 µA (min)
Low Current 10.75 µA
Diode Source Current Ratio 16
(1) “Typicals” are at T
A
= 25°C and represent most likely parametric norm. They are to be used as general reference values not for critical
design calculations.
(2) Limits are guaranteed to National's AOQL (Average Outgoing Quality Level).
(3) The accuracy of the LM96163 is guaranteed when using a typical thermal diode of an Intel processor on a 45 nm process, as selected
in the Remote Diode Model Select register. See Typical Performance Characteristics for performance with Intel processor on 65 nm or
90 nm process.
(4) Local temperature accuracy does not include the effects of self-heating. The rise in temperature due to self-heating is the product of the
internal power dissipation of the LM96163 and the thermal resistance.
(5) Thermal resistance junction to ambient when attached to a 2 layer 4"x3" printed circuit board with copper thickness of 2oz. as described
in JEDEC specification EIA/JESD51-3 is 137°C/W. Thermal resistance junction to ambient when attached to a 4 layer 4"x3" printed
circuit board with copper thickness 2oz./1oz./1oz/2oz. and 4 thermal vias as described in JEDEC specification EIA/JESD51-7 is
40.3°C/W.
Operating Electrical Characteristics
Symbol Parameter Conditions Typ
(1)
Limits
(2)
Units
2.8 V (max)
V
POR
Power-On-Reset Threshold Voltage
1.6 V (min)
SMBus Inactive, 13 Hz
1.1 1.6 mA (max)
Conversion Rate
I
S
Supply Current
(3)
SMBus Inactive, 0.8 Hz
456 825 µA (max)
Conversion Rate
STANDBY Mode 416 700 µA (max)
(1) “Typicals” are at T
A
= 25°C and represent most likely parametric norm. They are to be used as general reference values not for critical
design calculations.
(2) Limits are guaranteed to National's AOQL (Average Outgoing Quality Level).
(3) The supply current will not increase substantially with an SMBus transaction.
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