Datasheet

LM837
www.ti.com SNOSBZ6C –MAY 1999–REVISED MARCH 2013
DESIGN ELECTRICAL CHARACTERISTICS
T
A
= 25°C, V
S
=±15V
(1)
Symbol Parameter Condition Min Typ Max Units
PBW Power Bandwidth V
O
= 25 V
P-P
, R
L
= 600Ω,
200 kHz
THD < 1%
e
n1
Equivalent Input Noise Voltage JIS A, R
S
= 100Ω 0.5 μV
e
n2
Equivalent Input Noise Voltage f = 1 kHz 4.5 nV/ √Hz
i
n
Equivalent Input Noise Current f = 1 kHz 0.7 pA/ √Hz
THD Total Harmonic Distortion A
V
= 1, V
OUT
= 3 Vrms,
0.0015 %
f = 20 ∼ 20 kHz, R
L
= 600Ω
f
U
Zero Cross Frequency Open Loop 12 MHz
φ
m
Phase Margin Open Loop 45 deg
Input-Referred Crosstalk f = 20 ∼ 20 kHz −120 dB
ΔV
OS
/Δ Average TC of Input Offset Voltage
2 μV/°C
T
(1) The following parameters are not tested or ensured.
Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM837