Datasheet

LM8262
www.ti.com
SNOS975E MAY 2001REVISED APRIL 2013
LM8262 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in VSSOP
Check for Samples: LM8262
1
FEATURES
DESCRIPTION
The LM8262 is a Rail-to-Rail input and output Op
2
(V
S
= 5V, T
A
= 25°C, Typical Values Unless
Amp which can operate with a wide supply voltage
Specified).
range. This device has high output current drive,
GBWP 21MHz
greater than Rail-to-Rail input common mode voltage
Wide Supply Voltage Range 2.5V to 22V
range, unlimited capacitive load drive capability, and
provides tested and guaranteed high speed and slew
Slew Rate 12V/µs
rate. It is specifically designed to handle the
Supply Current/channel 1.15 mA
requirements of flat panel TFT panel V
COM
driver
Cap Load Limit Unlimited
applications as well as being suitable for other low
power, and medium speed applications which require
Output Short Circuit Current +53mA/75mA
ease of use and enhanced performance over existing
+/5% Settling Time 400ns (500pF, 100mV
PP
devices.
step)
Greater than Rail-to-Rail input common mode voltage
Input Common Mode Voltage 0.3V Beyond
range with 50dB of Common Mode Rejection, allows
Rails
high side and low side sensing, among many
Input Voltage Noise 15nV/Hz
applications, without having any concerns over
exceeding the range and no compromise in accuracy.
Input Current Noise 1pA/Hz
In addition, most device parameters are insensitive to
THD+N < 0.05%
power supply variations; this design enhancement is
yet another step in simplifying its usage. The output
APPLICATIONS
stage has low distortion (0.05% THD+N) and can
supply a respectable amount of current (15mA) with
TFT-LCD Flat Panel V
COM
driver
minimal headroom from either rail (300mV).
A/D Converter Buffer
The LM8262 is offered in the space saving VSSOP
High Side/low Side Sensing
package.
Headphone Amplifier
Connection Diagram
Figure 1. Output Response with Heavy Capacitive Figure 2. 8-Pin VSSOP (Top View)
Load
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2001–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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