Datasheet

LM6181
SNOS634B –MAY 1998–REVISED MAY 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LM6181