Datasheet

LM6172
www.ti.com SNOS792D –MAY 1999–REVISED MARCH 2013
Where
• P
D
is the power dissipation in a device
• T
J(max)
is the maximum junction temperature
• T
A
is the ambient temperature
• θ
JA
is the thermal resistance of a particular package
For example, for the LM6172 in a SOIC-8 package, the maximum power dissipation at 25°C ambient
temperature is 780mW.
Thermal resistance, θ
JA
, depends on parameters such as die size, package size and package material. The
smaller the die size and package, the higher θ
JA
becomes. The 8-pin DIP package has a lower thermal
resistance (95°C/W) than that of 8-pin SO (160°C/W). Therefore, for higher dissipation capability, use an 8-
pin DIP package.
The total power dissipated in a device can be calculated as: P
D
= P
Q
+ P
L
(2)
P
Q
is the quiescent power dissipated in a device with no load connected at the output. P
L
is the power dissipated
in the device with a load connected at the output; it is not the power dissipated by the load.
Furthermore,
P
Q
= supply current x total supply voltage with no load
P
L
= output current x (voltage difference between supply voltage and output voltage of the same supply)
For example, the total power dissipated by the LM6172 with V
S
= ±15V and both channels swinging output
voltage of 10V into 1kΩ is
P
D
= P
Q
+ P
L
= 2[(2.3mA)(30V)] + 2[(10mA)(15V − 10V)]
= 138mW + 100mW
= 238mW
Application Circuits
Figure 50. I-to-V Converters
Figure 51. Differential Line Driver
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