Datasheet

LM567 , LM567C
SNOSBQ4E –MAY 1999–REVISED DECEMBER 2014 www.ti.com
8 Specifications
8.1 Absolute Maximum Ratings
(1)(2)(3)
MIN MAX UNIT
Supply Voltage Pin 9 V
Power Dissipation
(4)
1100 mW
V
8
15 V
V
3
−10 V
V
3
V
4
+ 0.5 V
LM567CM, LM567CN 0 70 °C
PDIP Package Soldering (10 s) 260 °C
Operating Temperature Range
Vapor Phase (60 s) 215 °C
SOIC Package
Infrared (15 s) 220 °C
Storage temperature range, T
stg
−65 150 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate
conditions for which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC
electrical specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within
the Recommended Operating Conditions. Specifications are not ensured for parameters where no limit is given, however, the typical
value is a good indication of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) See http://www.ti.com for other methods of soldering surface mount devices.
(4) The maximum junction temperature of the LM567 and LM567C is 150°C. For operating at elevated temperatures, devices in the DIP
package must be derated based on a thermal resistance of 110°C/W, junction to ambient. For the SOIC package, the device must be
derated based on a thermal resistance of 160°C/W, junction to ambient.
8.2 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Supply Voltage 3.5 8.5 V
V
IN
Input Voltage Level –8.5 8.5 V
T
A
Operating Temperature Range –20 120 °C
8.3 Thermal Information
LM567C
THERMAL METRIC
(1)
D P UNIT
8 PINS
R
θJA
Junction-to-ambient thermal resistance 107.5 53.0
R
θJC(top)
Junction-to-case (top) thermal resistance 54.6 42.3
R
θJB
Junction-to-board thermal resistance 47.5 30.2 °C/W
ψ
JT
Junction-to-top characterization parameter 10.0 19.6
ψ
JB
Junction-to-board characterization parameter 47.0 30.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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