Datasheet

LM567 , LM567C
SNOSBQ4E –MAY 1999–REVISED DECEMBER 2014 www.ti.com
Feature Description (continued)
Table 1. Die and Wafer Characteristics
Fabrication Attributes General Die Information
Physical Die Identification LM567C Bond Pad Opening Size (min) 91µm x 91µm
Die Step C Bond Pad Metalization 0.5% COPPER_BAL.
ALUMINUM
Physical Attributes Passivation VOM NITRIDE
Wafer Diameter 150mm Back Side Metal BARE BACK
Dise Size (Drawn) 1600µm x 1626µm Back Side Connection Floating
63.0mils x 64.0mils
Thickness 406µm Nominal
Min Pitch 198µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (C - Step)
(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
OUTPUT FILTER 1 -673 686 91 x 91
LOOP FILTER 2 -673 -419 91 x 91
INPUT 3 -673 -686 91 x 91
V+ 4 -356 -686 91 x 91
TIMING RES 5 673 -122 91 x 91
TIMING CAP 6 673 76 91 x 91
GND 7 178 686 117 x 91
OUTPUT 8 -318 679 117 x 104
10.4 Device Functional Modes
10.4.1 Operation With V
i
< 200m – V
RMS
When the input signal is below a threshold voltage, typically 200m-VRMS, the bandwidth of the detection band
should be calculated .
where
• V
i
= Input voltage (volts rms), V
i
≤ 200mV
• C
2
= Capacitance at Pin 2(μF)
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