Datasheet

LM5112
www.ti.com SNVS234B –SEPTEMBER 2004–REVISED APRIL 2006
Absolute Maximum Ratings
(1)(2)
V
CC
to V
EE
−0.3V to 15V
V
CC
to IN_REF −0.3V to 15V
IN/INB to IN_REF −0.3V to 15V
IN_REF to V
EE
−0.3V to 5V
Storage Temperature Range −55°C to +150°C
Maximum Junction Temperature +150°C
Operating Junction Temperature −40°C+125°C
ESD Rating 2kV
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Electrical Characteristics
T
J
= −40°C to +125°C, V
CC
= 12V, INB = IN_REF = V
EE
= 0V, No Load on output, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SUPPLY
V
CC
V
CC
Operating Range V
CC
– IN_REF and V
CC
- V
EE
3.5 14 V
UVLO V
CC
Under-voltage Lockout (rising) V
CC
– IN_REF 2.4 3.0 3.5 V
V
CCH
V
CC
Under-voltage Hysteresis 230 mV
I
CC
V
CC
Supply Current 1.0 2.0 mA
CONTROL INPUTS
V
IH
Logic High 2.3 V
V
IL
Logic Low 0.8 V
V
thH
High Threshold 1.3 1.75 2.3 V
V
thL
Low Threshold 0.8 1.35 2.0 V
HYS Input Hysteresis 400 mV
I
IL
Input Current Low IN = INB = 0V -1 0.1 1 µA
I
IH
Input Current High IN = INB = V
CC
-1 0.1 1 µA
OUTPUT DRIVER
R
OH
Output Resistance High I
OUT
= -10mA
(1)
30 50 Ω
R
OL
Output Resistance Low I
OUT
= 10mA
(1)
1.4 2.5 Ω
I
SOURCE
Peak Source Current OUT = V
CC
/2, 200ns pulsed current 3 A
I
SINK
Peak Sink Current OUT = V
CC
/2, 200ns pulsed current 7 A
(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and
Bipolar devices.
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