Datasheet

-75 -50 -25 0 25 50 75 100 125 150 175
1.600
1.900
2.200
2.500
2.800
3.100
UVLO THRESHOLDS (V)
TEMPERATURE (°C)
0.150
0.210
0.270
0.330
0.450
0.390
HYSTERESIS
(
V
)
V
CCR
V
CCF
V
CCH
-75 -50 -25 0 25 50 75 100 125 150 175
17.5
20
22.5
25
27.5
30
32.5
TIME (ns)
TEMPERATURE (°C)
t
D2
t
D1
V
CC
= 12V
C
L
= 2200pF
0
3 6 9 12 15 18
SUPPLY VOLTAGE (V)
0.75
1.25
1.75
2.25
2.75
3.25
R
OL
(:)
15
25
45
55
65
35
R
OH
(
:
)
R
OH
R
OL
T
A
= 25°C
I
OUT
= 10mA
LM5111
www.ti.com SNVS300G –JULY 2004–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Delay Time vs Temperature RDSON vs Supply Voltage
Figure 11. Figure 12.
UVLO Thresholds and Hysteresis vs Temperature
Figure 13.
Detailed Operating Description
LM5111 dual gate driver consists of two independent and identical driver channels with TTL compatible logic
inputs and high current totem-pole outputs that source or sink current to drive MOSFET gates. The driver output
consist of a compound structure with MOS and bipolar transistor operating in parallel to optimize current
capability over a wide output voltage and operating temperature range. The bipolar device provides high peak
current at the critical threshold region of the MOSFET VGS while the MOS devices provide rail-to-rail output
swing. The totem pole output drives the MOSFET gate between the gate drive supply voltage V
CC
and the power
ground potential at the V
EE
pin.
The control inputs of the drivers are high impedance CMOS buffers with TTL compatible threshold voltages. The
LM5111 pinout was designed for compatibility with industry standard gate drivers in single supply gate driver
applications.
The input stage of each driver should be driven by a signal with a short rise and fall time. Slow rising and falling
input signals, although not harmful to the driver, may result in the output switching repeatedly at a high
frequency.
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