Datasheet
LM5111
SNVS300G –JULY 2004–REVISED MARCH 2013
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Electrical Characteristics
T
J
= −40°C to +125°C, V
CC
= 12V, V
EE
= 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
V
CC
Operating Range V
CC
−V
EE
3.5 14 V
V
CCR
V
CC
Under Voltage Lockout (rising) V
CC
−V
EE
2.3 2.9 3.5 V
V
CCH
V
CC
Under Voltage Lockout
230 mV
Hysteresis
I
CC
IN_A = IN_B = 0V (5111-1) 1 2
V
CC
Supply Current (I
CC
) IN_A = IN_B = V
CC
(5111-2) 1 2 mA
IN_A = V
CC
, IN_B = 0V (5111-3) 1 2
CONTROL INPUTS
V
IH
Logic High 2.2 V
V
IL
Logic Low 0.8 V
V
thH
High Threshold 1.3 1.75 2.2 V
V
thL
Low Threshold 0.8 1.35 2.0 V
HYS Input Hysteresis 400 mV
I
IL
Input Current Low IN_A=IN_B=V
CC
(5111-1-2-3) −1 0.1 1
I
IH
IN_B=V
CC
(5111-3) 10 18 25
IN_A=IN_B=V
CC
(5111-2) −1 0.1 1 µA
Input Current High
IN_A=IN_B=V
CC
(5111-1) 10 18 25
IN_A=V
CC
(5111-3) -1 0.1 1
OUTPUT DRIVERS
R
OH
Output Resistance High I
OUT
= −10 mA
(1)
30 50 Ω
R
OL
Output Resistance Low I
OUT
= + 10 mA
(1)
1.4 2.5 Ω
I
Source
OUTA/OUTB = V
CC
/2,
Peak Source Current 3 A
200 ns Pulsed Current
I
Sink
OUTA/OUTB = V
CC
/2,
Peak Sink Current 5 A
200 ns Pulsed Current
SWITCHING CHARACTERISTICS
td1 Propagation Delay Time Low to C
LOAD
= 2 nF
25 40 ns
High, IN rising (IN to OUT) See Figure 3 and Figure 4
td2 Propagation Delay Time High to C
LOAD
= 2 nF
25 40 ns
Low, IN falling (IN to OUT) See Figure 3 and Figure 4
t
r
C
LOAD
= 2 nF
Rise Time 14 25 ns
See Figure 3 and Figure 4
t
f
C
LOAD
= 2 nF
Fall Time 12 25 ns
See Figure 3 and Figure 4
LATCHUP PROTECTION
AEC - Q100, Method 004 T
J
= 150°C 500 mA
THERMAL RESISTANCE
θ
JA
Junction to Ambient, SOIC Package 170
°C/W
0 LFPM Air Flow VSSOP Package 60
θ
JC
SOIC Package 70
Junction to Case °C/W
VSSOP Package 4.7
(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and
Bipolar devices.
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