Datasheet
LM5110
SNVS255A –MAY 2004–REVISED MAY 2004
www.ti.com
Configuration Table
Part Number “A” Output Configuration “B” Output Configuration Package
LM5110-1M Non-Inverting Non-Inverting SOIC- 8
LM5110-2M Inverting Inverting SOIC- 8
LM5110-3M Inverting Non-Inverting SOIC- 8
LM5110-1SD Non-Inverting Non-Inverting WSON-10
LM5110-2SD Inverting Inverting WSON-10
LM5110-3SD Inverting Non-Inverting WSON-10
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
V
CC
to V
EE
−0.3V to 15V
V
CC
to IN_REF −0.3V to 15V
IN to IN_REF, nSHDN to IN_REF −0.3V to 15V
IN_REF to V
EE
−0.3V to 5V
Storage Temperature Range, T
STG
−55°C to +150°C
Maximum Junction Temperature, T
J
(max) +150°C
Operating Junction Temperature +125°C
ESD Rating 2kV
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Electrical Characteristics
T
J
= −40°C to +125°C, V
CC
= 12V, V
EE
= IN_REF = 0V, nSHDN = V
CC
, No Load on OUT_A or OUT_B, unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Units
V
CC
Operating Range V
CC
−IN_REF and V
CC
−V
EE
3.5 14 V
V
CCR
V
CC
Under Voltage Lockout (rising) V
CC
−IN_REF 2.3 2.9 3.5 V
V
CCH
V
CC
Under Voltage Lockout
230 mV
Hysteresis
I
CC
V
CC
Supply Current (I
CC
) IN_A = IN_B = 0V (5110-1) 1 2
IN_A = IN_B = V
CC
(5110-2) 1 2
mA
IN_A = V
CC
, IN_B = 0V
1 2
(5110-3)
I
CCSD
V
CC
Shutdown Current (I
CC
) nSHDN = 0V 18 25 µA
CONTROL INPUTS
V
IH
Logic High 1.75 2.2 V
V
IL
Logic Low 0.8 1.35 V
HYS Input Hysteresis 400 mV
I
IL
Input Current Low IN_A=IN_B=V
CC
(5110-1-2-3) −1 0.1 1
I
IH
Input Current High IN_A=IN_B=V
CC
(5110-1) 10 18 25
IN_A=IN_B=V
CC
(5110-2) −1 0.1 1 µA
IN_A=V
CC
(5110-3) -1 0.1 1
IN_B=V
CC
(5110-3) 10 18 25
SHUTDOWN INPUT
ISD Pull-up Current nSHDN = 0 V −18 −25 µA
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