Datasheet
LM5109A
www.ti.com
SNVS412A –APRIL 2006–REVISED MARCH 2013
PIN DESCRIPTIONS (continued)
Pin #
NAME DESCRIPTION APPLICATION INFORMATION
SOIC WSON
(1)
Connect the positive terminal of the bootstrap capacitor to HB and
High side gate driver positive
8 8 HB the negative terminal of the bootstrap capacitor to HS. The bootstrap
supply rail
capacitor should be placed as close to IC as possible.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
V
DD
to V
SS
–0.3V to 18V
HB to HS −0.3V to 18V
LI or HI to V
SS
−0.3V to V
DD
+ 0.3V
LO to V
SS
−0.3V to V
DD
+ 0.3V
HO to V
SS
V
HS
− 0.3V to V
HB
+ 0.3V
HS to V
SS
(3)
−5V to 90V
HB to V
SS
108V
Junction Temperature –40°C to 150°C
Storage Temperature Range −55°C to 150°C
ESD Rating HBM
(4)
1.5 kV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics .
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
– 15V. For example, if
V
DD
= 10V, the negative transients at HS must not exceed –5V.
(4) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.
Recommended Operating Conditions
V
DD
8V to 14V
HS
(1)
−1V to 90V
HB V
HS
+ 8V to V
HS
+ 14V
HS Slew Rate < 50 V/ns
Junction Temperature −40°C to 125°C
(1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
– 15V. For example, if
V
DD
= 10V, the negative transients at HS must not exceed –5V.
Electrical Characteristics
Specifications in standard typeface are for T
J
= 25°C, and those in boldface type apply over the full operating junction
temperature range. Unless otherwise specified, V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO
(1)
.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Supply Currents
I
DD
V
DD
quiescent current LI = HI = 0V 0.3 0.6 mA
I
DDO
V
DD
operating current f = 500 kHz 1.8 2.9 mA
I
HB
Total HB quiescent current LI = HI = 0V 0.06 0.2 mA
I
HBO
Total HB operating current f = 500 kHz 1.4 2.8 mA
(1) Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through
correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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