Datasheet
LM5107
www.ti.com
SNVS333D –NOVEMBER 2004–REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
V
DD
to V
SS
-0.3V to 18V
HB to HS −0.3V to 18V
LI or HI to V
SS
−0.3V to V
DD
+0.3V
LO to V
SS
−0.3V to V
DD
+0.3V
HO to V
SS
V
HS
−0.3V to V
HB
+0.3V
HS to V
SS
(3)
−5V to 100V
HB to V
SS
118V
Junction Temperature -40°C to +150°C
Storage Temperature Range −55°C to +150°C
ESD Rating HBM
(4)
2 kV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics .
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
- 15V. For example, if V
DD
= 10V, the negative transients at HS must not exceed -5V.
(4) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. Pin 6 , Pin 7 and Pin 8 are rated at
500V.
Recommended Operating Conditions
V
DD
8V to 14V
HS
(1)
−1V to 100V
HB V
HS
+8V to V
HS
+14V
HS Slew Rate < 50 V/ns
Junction Temperature −40°C to +125°C
(1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
- 15V. For example, if V
DD
= 10V, the negative transients at HS must not exceed -5V.
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