Datasheet

HO
HS
LO
V
SS
HB
LM5102
HI
LI
V
DD
RT1 RT2
Driver
Driver
DLY
Logic
DLY
Logic
T
DH
t
P
T
DH
= t
P
+ t
RT1
t
P
T
DL
T
DL
= t
P
+ t
RT2
LI
HI
LO
HO
LM5102
www.ti.com
SNVS268A MAY 2004REVISED MARCH 2013
LM5102 Waveforms
Figure 17. Figure 18. Application Timing Waveforms
Operational Notes
The LM5102 offers a unique flexibility with independently programmable delay of the rising edge for both high
and low side driver outputs independently. The delays are set with resistors at the RT1 and RT2 pins, and can
be adjusted from 100 ns to 600 ns. This feature reduces component count, board space and cost compared to
discrete solutions for adjusting driver dead time. The wide delay programming range provides the flexibility to
optimize drive signal timing for a wide range of MOSFETs and applications.
The RT pins are biased at 3V and current limited to 1 mA maximum programming current. The time delay
generator will accommodate resistor values from 5k to 100k with turn-on delay times that are proportional to the
RT resistance. In addition, each RT pin is monitored by a comparator that will bypass the turn-on delay if the RT
pin is pulled below the timer elimination threshold (1.8V typical). Grounding the RT pins programs the LM5102 to
drive both outputs with minimum turn-on delay.
STARTUP AND UVLO
Both top and bottom drivers include under-voltage lockout (UVLO) protection circuitry which monitors the supply
voltage (V
DD
) and bootstrap capacitor voltage (V
HB
V
HS
) independently. The UVLO circuit inhibits each driver
until sufficient supply voltage is available to turn-on the external MOSFETs, and the built-in hysteresis prevents
chattering during supply voltage transitions. When the supply voltage is applied to V
DD
pin of LM5102, the top
and bottom gates are held low until V
DD
exceeds UVLO threshold, typically about 6.9V. Any UVLO condition on
the bootstrap capacitor will disable only the high side output (HO).
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