Datasheet

-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
DELAY (ns)
T
HPHL
T
LPHL
-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
0.100
0.150
0.200
0.250
0.300
0.350
0.400
V
OL
(V)
V
DD
= V
HB
= 8V
V
DD
= V
HB
= 12V
V
DD
= V
HB
= 16V
-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
THRESHOLD (V)
V
HBR
V
DDR
-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
0.100
0.200
0.300
0.400
0.500
0.600
0.700
V
OH
(V)
V
DD
= V
HB
= 8V
V
DD
= V
HB
= 12V
V
DD
= V
HB
= 16V
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
I
D
(A)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
D
(V)
T = 25°C
T = -40°C
T = 150°C
-25 0 25 50 75 100 125 150
TEMPERATURE (
o
C)
0.30
0.35
0.40
0.45
0.50
0.55
0.60
HYSTERESIS (V)
-50
V
HBH
V
DDH
LM5102
www.ti.com SNVS268A –MAY 2004–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Diode Forward Voltage Undervoltage Threshold Hysteresis vs Temperature
Figure 8. Figure 9.
LO & HO Gate Drive—High Level Output Voltage vs
Undervoltage Rising Threshold vs Temperature Temperature
Figure 10. Figure 11.
LO & HO Gate Drive—Low Level Output Voltage vs
Temperature Turn Off Propagation Delay vs Temperature
Figure 12. Figure 13.
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