Datasheet

V
DD
HB
HO
HS
LO
V
SS
LI
HI
1
10
2
9
3
8
4
7
RT1 RT2
5
6
LM5102
www.ti.com SNVS268A –MAY 2004–REVISED MARCH 2013
Connection Diagram
Figure 1. 10-Lead VSSOP, WSON
PIN FUNCTIONS
PIN
NAME DESCRIPTION APPLICATION INFORMATION
VSSOP WSON
(1)
Locally decouple to VSS using low ESR/ESL capacitor,
1 1 V
DD
Positive gate drive supply
located as close to IC as possible.
Connect the positive terminal of bootstrap capacitor to the HB
pin and connect negative terminal of bootstrap capacitor to
2 2 HB High-side gate driver bootstrap rail
HS. The Bootstrap capacitor should be placed as close to IC
as possible.
Connect to gate of high side MOSFET with short low
3 3 HO High-side gate driver output
inductance path.
Connect bootstrap capacitor negative terminal and source of
4 4 HS High-side MOSFET source connection
high side MOSFET.
Resistor from RT1 to ground programs the leading edge delay
High-side output edge delay of the high side gate driver. The resistor should be placed
5 5 RT1
programming close to the IC to minimize noise coupling from adjacent
traces.
Resistor from RT2 to ground programs the leading edge delay
6 6 RT2 Low-side output edge delay programming of the low side gate driver. The resistor should be placed close
to the IC to minimize noise coupling from adjacent traces.
7 7 HI High-side driver control input
TTL compatible thresholds. Unused inputs should be tied to
ground and not left open
8 8 LI Low-side driver control input
9 9 V
SS
Ground return All signals are referenced to this ground.
Connect to the gate of the low side MOSFET with a short low
19 19 LO Low-side gate driver output
inductance path.
(1) For the WSON package, it is recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to ground plane
on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat..
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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