Datasheet
Table Of Contents

NRND
LM5100, LM5101
www.ti.com
SNVS267C –MAY 2004–REVISED MARCH 2005
PIN DESCRIPTION
(1)
Pin #
Name Description Application Information
WSON-
SO-8
10
1 1 V
DD
Positive gate drive supply Locally decouple to V
SS
using low ESR/ESL capacitor located as
close to IC as possible.
2 2 HB High side gate driver bootstrap Connect the positive terminal of the bootstrap capacitor to HB and
rail the negative terminal to HS. The Bootstrap capacitor should be place
as close to IC as possible.
3 3 HO High side gate driver output Connect to gate of high side MOSFET with a short low inductance
path.
4 4 HS High side MOSFET source Connect to bootstrap capacitor negative terminal and the source of
connection the high side MOSFET.
5 7 HI High side driver control input The LM5100 inputs have CMOS type thresholds. The LM5101 inputs
have TTL type thresholds. Unused inputs should be tied to ground
and not left open.
6 8 LI Low side driver control input The LM5100 inputs have CMOS type thresholds. The LM5101 inputs
have TTL type thresholds. Unused inputs should be tied to ground
and not left open.
7 9 V
SS
Ground return All signals are referenced to this ground.
8 10 LO Low side gate driver output Connect to the gate of the low side MOSFET with a short low
inductance path.
(1) Note: For WSON-10 package, it is recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to
ground plane on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat. Pins 5
and 6 have no connection.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2004–2005, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM5100 LM5101