Datasheet

LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
www.ti.com SNOSAW2P –SEPTEMBER 2006–REVISED MARCH 2013
PIN DESCRIPTIONS
(1)
(continued)
Pin #
SO MSOP-
Name Description Application Information
WSON- WSON-
SOIC-8 Power PowerPad
8
(1)
10
(1)
Pad-8 -8
(1)
High-side
MOSFET Connect to the bootstrap capacitor negative terminal
4 4 4 4 4 HS
source and the source of the high-side MOSFET.
connection
The LM5100A/B/C inputs have CMOS type
High-side driver thresholds. The LM5101A/B/C inputs have TTL type
5 5 5 7 5 HI
control input thresholds. Unused inputs should be tied to ground
and not left open.
The LM5100A/B/C inputs have CMOS type
Low-side driver thresholds. The LM5101A/B/C inputs have TTL type
6 6 6 8 6 LI
control input thresholds. Unused inputs should be tied to ground
and not left open.
7 7 7 9 7 VSS Ground return All signals are referenced to this ground.
Low-side gate Connect to the gate of the low-side MOSFET with a
8 8 8 10 8 LO
driver output short, low inductance path.
EP (WSON and SO
Solder to the ground plane under the IC to aid in heat
EP EP EP EP PowerPad and MSOP-
dissipation.
PowerPad packages)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
VDD to VSS −0.3V to +18V
HB to HS −0.3V to +18V
LI or HI Input −0.3V to V
DD
+0.3V
LO Output −0.3V to V
DD
+0.3V
HO Output V
HS
−0.3V to V
HB
+0.3V
HS to VSS
(3)
−5V to +100V
HB to VSS 118V
Junction Temperature +150°C
Storage Temperature Range −55°C to +150°C
ESD Rating HBM
(4)
2 kV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics Electrical Characteristics tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not
exceed -1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage
transiently. If negative transients occur, the HS voltage must never be more negative than VDD-15V. For example if VDD = 10V, the
negative transients at HS must not exceed -5V.
(4) The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. 2 kV for all pins except Pin 2,
Pin 3 and Pin 4 which are rated at 1000V for HBM. Machine Model (MM) ratings are : 100V(MM) for Options B and C; 50V(MM) for
Option A.
Recommended Operating Conditions
VDD +9V to +14V
HS −1V to 100V
HB V
HS
+8V to V
HS
+14V
HS Slew Rate < 50 V/ns
Junction Temperature −40°C to +125°C
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