Datasheet

-40
-20 0 20 40 60 80 100 125
JUNCTION TEMPERATURE (
o
C)
INPUT CURRENT, ENABLED (mA)
1.280
1.290
1.300
1.310
1.320
V
IN
= 48V
-40
-20 0 20 40 60 80 100 125
JUNCTION TEMPERATURE (
o
C)
UVLO HYSTERESIS CURRENT (PA)
19
20
21
22
23
-40
-20 0 20 40 60 80 100 125
JUNCTION TEMPERATURE (°C)
OVLO HYSTERESIS CURRENT (PA)
19
20
21
22
23
0 10 20 30 82 92
0
50
100
150
200
250
GATE PULLDOWN CURRENT,
CIRCUIT BREAKER (mA)
GATE PIN VOLTAGE (V)
T
J
= 25°C
|
|
240
200
120
0
0
160
40
R
PWR
(k:)
P
FET
(W)
30 60 90 120 150
80
R
S
= 0.005:
R
S
= 0.01:
R
S
= 0.02:
R
S
= 0.05:
R
S
= 0.1:
LM5069
SNVS452D SEPTEMBER 2006REVISED MAY 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise specified the following conditions apply: T
J
= 25°C, V
IN
= 48V
MOSFET Power Dissipation Limit GATE Pull-Down Current, Circuit Breaker
vs. vs
R
PWR
and R
S
GATE Voltage
Figure 9. Figure 10.
UVLO Hysteresis Current OVLO Hysteresis Current
vs. vs.
Temperature Temperature
Figure 11. Figure 12.
UVLO, OVLO Threshold Input Current, Enabled
vs. vs.
Temperature Temperature
Figure 13. Figure 14.
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