Datasheet

V
IN
(20V/Div)
V
OUT
(20V/Div)
V
GATE
(20V/Div)
V
IN
(20V/Div)
V
PGD
(5V/Div)
V
OUT
(20V/Div)
V
TIMER
(2V/Div)
V
IN
(20V/Div)
V
GATE
(20V/Div)
V
OUT
(20V/Div)
RETRY PERIOD = 1.4s
V
TIMER
(2V/Div)
V
IN
(20V/Div)
V
GATE
(20V/Div)
I
IN
(2A/Div)
0 25 50 75 100 125 150
0
50
100
150
200
250
300
P
MOSFET(LIM)
(W)
R
PWR
(k)
Rs = 3 m
Rs = 5 m
Rs = 10 m
Rs = 20 m
V
TIMER
(2V/Div)
V
IN
(20V/Div)
V
GATE
(20V/Div)
V
OUT
(20V/Div)
INSERTION
DELAY = 140 ms
-60 -40 -20 0 20 40 60 80 100120140
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
IIN ERROR ( % OF FSR)
TEMPERATURE ( °C)
-60 -40 -20 0 20 40 60 80 100120140
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
PIN ERROR (% OF FSR)
TEMPERATURE (°C)
LM5066
SNVS655G –JUNE 2011–REVISED FEBRUARY 2013 www.ti.com
Typical Performance Characteristics (continued)
Unless otherwise specified the following conditions apply: T
J
= 25°C, V
IN
= 48V. All graphs show junction temperature.
IIN Measurement Accuracy PIN Measurement Accuracy
(VIN - SENSE = 50 mV) (VIN - SENSE = 50 mV)
MOSFET Power Dissipation Limit
vs.
R
PWR
and R
S
Startup (Insertion Delay)
(VIN = 48V) 100 ms/DIV
Startup (Short circuit V
OUT
) Startup (1A Load)
1s/DIV 50 ms/DIV
Startup (UVLO/EN, OVLO) Startup (PGD)
200 ms/DIV 200 ms/DIV
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