Datasheet
LM5026
SNVS363D –AUGUST 2005–REVISED APRIL 2013
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Electrical Characteristics (continued)
Specifications with standard typeface are for T
J
= 25°C, and those with boldface type apply over full Operating Junction
Temperature range. V
IN
= 48V, V
CC
= 10V, RT = 30.0kΩ, R
SET
= 34.8kΩ) unless otherwise stated
(1)
Symbol Parameter Conditions Min Typ Max Units
OUT_A High Saturation MOS Device @ Iout = -10mA, 5 10 Ω
OUTPUT_A Peak Bipolar Device @ Vcc/2 3 A
Current Sink
OUT_A Low Saturation MOS Device @ Iout = 10mA, 6 9 Ω
OUTPUT_A Rise Time C
gate
= 2.2nF 20 ns
OUTPUT_A Fall Time C
gate
= 2.2nF 15 ns
OUT_B High Saturation Iout = -10mA, 10 20 Ω
OUT_B Low Saturation Iout = 10mA, 10 20 Ω
OUTPUT_B Rise Time C
gate
= 470pF 15 ns
OUTPUT_B Fall Time C
gate
= 470pF 15 ns
Output Timing Control
Overlap Time R
SET
= 34.8 kΩ connected to 70 100 130 ns
GND, 50% to 50% transitions
Deadtime R
SET
= 30.0 kΩ connected to 70 100 130 ns
REF, 50% to 50% transitions
Thermal Shutdown
T
SD
Thermal Shutdown 150 165 °C
Temp.
Thermal Shutdown 25 °C
Hysteresis
Thermal Resistance
θ
JA
Junction to Ambient PW0016A Package 125 °C/W
NHQ0016A Package 32 °C/W
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