Datasheet

LM4871
SNAS002F –FEBRUARY 2000–REVISED MAY 2013 www.ti.com
Die/Wafer Characteristics
Fabrication Attributes General Die Information
Physical Die Identification LM4871C Bond Pad Opening Size (min) 102µm x 102µm
Die Step C Bond Pad Metalization 0.5% COPPER_BAL.
ALUMINUM
Physical Attributes Passivation NITRIDE
Wafer Diameter 150mm Back Side Metal BARE BACK
Dise Size (Drawn) 1372µm x 1758µm Back Side Connection GND
54mils x 69mils
Thickness 406µm Nominal
Min Pitch 164µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (C - Step)
(Referenced to die center, coordinates in µm) NC = No Connection
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
SHUTDOWN 1 -559 541 102 x 102
BYPASS 2 -559 376 102 x 102
NC 3 -559 -45 102 x 210
INPUT + 4 -559 -248 102 x 102
INPUT - 5 -559 -486 102 x 102
GND 6 -476 -725 102 x 102
VOUT 1 7 -135 -598 102 x 210
GND 8 554 -686 102 x 102
VDD 9 554 -4 102 x 210
GND 10 554 568 102 x 102
VOUT 2 11 -135 598 102 x 210
GND 12 -473 752 102 x 102
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