Datasheet

LM4864
SNAS109F –SEPTEMBER 1999–REVISED MAY 2013 www.ti.com
LM4864 MDC MWC
725MW Audio Power Amplifier With Shutdown Mode
Figure 38. Die Layout (B - Step)
Table 1. DIE/WAFER CHARACTERISTICS
Fabrication Attributes General Die Information
Physical Die Identification LM4862B Bond Pad Opening Size (min) 86µm x 86µm
Die Step B Bond Pad Metalization ALUMINUM
Physical Attributes Passivation NITRIDE
Wafer Diameter 150mm Back Side Metal Bare Back
Dise Size (Drawn) 1283µm x 952µm Back Side Connection GND
51mils x 37mils
Thickness 406µm Nominal
Min Pitch 117µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (B - Step)
(Referenced to die center, coordinates in µm) NC = No Connection
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
BYPASS 1 -322 523 86 x 86
GND 2 -359 259 86 x 188
INPUT + 3 -359 5 86 x 86
GND 4 -359 -259 86 x 188
NC 5 -323 -523 86 x 86
INPUT - 6 -109 -523 86 x 86
VOUT 1 7 8 -523 86 x 86
VDD 8 358 -78 86 x 188
GND 9 358 141 86 x 188
NC 10 359 406 86 x 86
NC 11 323 523 86 x 86
VOUT 2 12 8 523 86 x 86
SHUTDOWN 13 -109 523 86 x 86
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