Datasheet

LM4861
SNAS095C –MAY 1997–REVISED MAY 2013 www.ti.com
LM4861 MDA MWA
1.1W Audio Power Amplifier with Shutdown Mode
Figure 19. Die Layout (B - Step)
Table 1. DIE/WAFER CHARACTERISTICS
Fabrication Attributes General Die Information
Physical Die Identification LM4861B Bond Pad Opening Size (min) 83µm x 83µm
Die Step B Bond Pad Metalization ALUMINUM
Physical Attributes Passivation VOM NITRIDE
Wafer Diameter 150mm Back Side Metal BARE BACK
Dise Size (Drawn) 1372µm x 2032µm Back Side Connection GND
54.0mils x 80.0mils
Thickness 406µm Nominal
Min Pitch 108µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (B - Step)
(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
SHUTDOWN 1 -425 710 83 x 83
BYPASS 2 -445 499 83 x 83
NC 3 -445 -34 83 x 170
NC 4 -445 -383 83 x 83
INPUT + 5 -445 -492 83 x 83
12 Submit Documentation Feedback Copyright © 1997–2013, Texas Instruments Incorporated
Product Folder Links: LM4861