Datasheet

LM4860
www.ti.com SNAS096C –AUGUST 1994–REVISED MAY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage 6.0V
Storage Temperature −65°C to +150°C
Input Voltage −0.3V to V
DD
+ 0.3V
Power Dissipation Internally limited
ESD Susceptibility
(3)
3000V
ESD Susceptibility
(4)
250V
Junction Temperature 150°C
Soldering Information SOIC Package Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human body model, 100 pF discharged through a 1.5 kΩ resistor.
(4) Machine Model, 200 pF–240 pF discharged through all pins.
Operating Ratings
Temperature Range T
MIN
≤ T
A
≤ T
MAX
−20°C ≤ T
A
≤ +85°C
Supply Voltage 2.7V ≤ V
DD
≤ 5.5V
Electrical Characteristics
The following specifications apply for V
DD
= 5V, R
L
= 8Ω unless otherwise specified. Limits apply for T
A
= 25°C.
(1)(2)
LM4860
Units
Parameter Test Conditions
(Limits)
Typ
(3)
Limit
(4)
V
DD
Supply Voltage 2.7 V (min)
5.5 V (max)
I
DD
Quiescent Power Supply Current V
O
= 0V, I
O
= 0A
(5)
7.0 15.0 mA (max)
I
SD
Shutdown Current V
pin2
= V
DD
(6)
0.6 μA
V
OS
Output Offset Voltage V
IN
= 0V 5.0 50.0 mV (max)
P
O
Output Power THD+N = 1% (max); f = 1 kHz 1.15 1.0 W (min)
THD+N Total Harmonic Distortion + Noise P
O
= 1 Wrms; 20 Hz ≤ f ≤ 20 kHz 0.72 %
PSRR Power Supply Rejection Ratio V
DD
= 4.9V to 5.1V 65 dB
V
od
Output Dropout Voltage V
IN
= 0V to 5V, V
od
= (V
o1
− V
o2
) 0.6 1.0 V (max)
V
IH
HP-IN High Input Voltage HP-SENSE = 0V to 4V 2.5 V
V
IL
HP-IN Low Input Voltage HP-SENSE = 4V to 0V 2.5 V
V
OH
HP-SENSE High Output Voltage I
O
= 500 μA 2.8 2.5 V (min)
V
OL
HP-SENSE Low Output Voltage I
O
= −500 μA 0.2 0.8 V (max)
(1) All voltages are measured with respect to the ground pins, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to Texas Instrument's AOQL (Average Outgoing Quality Level).
(5) The quiescent power supply current depends on the offset voltage when a practical load is connected to the amplifier.
(6) Shutdown current has a wide distribution. For Power Management sensitive designs, contact your local Texas Instruments Sales Office.
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