Datasheet
LM48556
SNAS452B –JUNE 2008–REVISED MAY 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(3)
Supply Voltage (SV
DD
, PV
DD
)
(1)
5.25V
Storage Temperature −65°C to +150°C
Input Voltage −0.3V to V
DD
+ 0.3V
Power Dissipation
(4)
Internally limited
ESD Rating
(5)
2000V
ESD Rating
(6)
200V
Junction Temperature 150°C
Thermal Resistance θ
JA
(YZR) 114°C/W
Soldering Information See AN-1112 (SNVA009) Micro SMD Wafer Level Chip Scale
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by T
JMAX
, θ
JA
, and the ambient temperature,
T
A
. The maximum allowable power dissipation is P
DMAX
= (T
JMAX
- T
A
) / θ
JA
or the number given in Absolute Maximum Ratings,
whichever is lower.
(5) Human body model, applicable std. JESD22-A114C.
(6) Machine model, applicable std. JESD22-A115-A.
Operating Ratings
Temperature Range T
MIN
≤ T
A
≤ T
MAX
−40°C ≤ T
A
≤ +85°C
Supply Voltage (SV
DD
, PV
DD
) 2.7V ≤ _V
DD
≤ 5.0V
Electrical Characteristics V
DD
= 3.6V
(1)
The following specifications apply for V
DD
= 3.6V, A
V-BTL
= 20dB (R
F
= 200kΩ, R
IN
= 20kΩ), Z
L
= 15Ω+1μF, unless otherwise
specified. Limits apply for T
A
= 25°C.
LM48556
Units
Symbol Parameter Conditions
(Limits)
Typical
(2)
Limit
(3)
I
DD
Quiescent Power Supply Current V
IN
= 0V 4.8 7 mA (max)
I
SD
Shutdown Current V
SD
= GND (Note 8) 0.1 1 µA (max)
V
OS
Output Offset Voltage C
IN
= 0.47μF, A
V
= 1V/V (0dB) 0.6 4 mV (max)
T
WU
Wake-up Time 0.5 ms
THD+N = 1% (max); f = 1kHz 14.2 V
PP
V
OUT
Output Voltage Swing
THD+N = 1% (max); f = 10kHz 11.5 11 V
PP
(min)
V
OUT
= 11V
PP
, f = 1kHz
THD+N Total Harmonic Distortion + Noise A
V
= 0dB 0.005 %
A
V
= 20dB 0.03 %
A-weighted filter, V
IN
= 0V
ε
OS
Output Noise 8 μV
Input referred
PSRR Power Supply Rejection Ratio V
RIPPLE
= 200mV
PP
, f = 217Hz 80 60 dB (min)
(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
(2) Typical values represent most likely parametric norms at T
A
= +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
(3) Datasheet min/max specification limits are specified by test or statistical analysis.
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