Datasheet

LM4810
SNAS125D –FEBRUARY 2001–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage 6.0V
Storage Temperature −65°C to +150°C
ESD Susceptibility
(3)
3.5kV
ESD Machine Model
(4)
250V
Junction Temperature (T
J
) 150°C
Vapor Phase (60 sec.) 215°C
Soldering Information SOIC Package
Infrared (15 sec.) 220°C
θ
JA
(SOIC) 170°C/W
θ
JC
(SOIC) 35°C/W
θ
JA
(VSSOP) 210°C/W
Thermal Resistance θ
JC
(VSSOP) 56°C/W
θ
JA
(WSON) 117°C/W
(5)
θ
JA
(WSON) 150°C/W
(6)
θ
JC
(WSON) 15°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human body model, 100pF discharged through a 1.5kΩ resistor.
(4) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ohms).
(5) The given θ
JA
is for an LM4810 packaged in an NGL0008B with the Exposed-Dap soldered to a printed circuit board copper pad with an
area equivalent to that of the Exposed-Dap itself.
(6) The given θ
JA
is for an LM4810 packaged in an NGL0008B with the Exposed-Dap not soldered to any circuit board copper.
Operating Ratings
(1)
Temperature Range T
MIN
≤ T
A
≤ T
MAX
−40°C ≤ T
A
≤ 85°C
Supply Voltage (V
CC
2.0V ≤ V
CC
≤ 5.5V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Electrical Characteristics
(1)(2)
The following specifications apply for V
DD
= 5V unless otherwise specified, limits apply to T
A
= 25°C.
LM4810
Units
Parameter Test Conditions
(Limits)
Typ
(3)
Limit
(4)
V
DD
Supply Voltage 2.0 V (min)
5.5 V (max)
I
DD
Supply Current V
IN
= 0V, I
O
= 0A 1.3 3 mA(max)
I
SD
Shutdown Current V
IN
= 0V, V
SHUTDOWN
= V
DD
0.4 2 µA(max)
V
OS
Output Offset Voltage V
IN
= 0V 4.0 50 mV(max)
P
O
Output Power THD+N = 0.1%, f = 1kHz
R
L
= 16Ω 105 mW
R
L
= 32Ω 70 65 mW(min)
THD+N Total Harmonic Distortion P
O
= 50mW, R
L
= 32Ω 0.3 %
f = 20Hz to 20kHz
Crosstalk Channel Separation R
L
= 32Ω; P
O
= 70mW 70 dB
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) All voltages are measured with respect to the ground pin, unless otherwise specified.
(3) Typical specifications are specified at +25OC and represent the most likely parametric norm.
(4) Datasheet max/min specification limits are ensured by design, test, or statistical analysis.
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